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One-step fabrication of InxGa1−xSb nanowires by vapor transport method

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Abstract

We try to synthesize InxGa1−xSb nanowires on silicon (100) substrate using InSb and GaSb as source materials and we succeeded. Au film was used as catalysts. The experiment is simple and repeatable. The diameter of the grown nanowires is 60–200 nm and up to 10 microns in length. The grown nanowires have good crystallinity. Due to the doping of indium, we found that the XRD peaks of nanowires were shifted. We have fabricated fully nanostructured device using ultra-long Ag nanowires as electrodes for the I–V characteristic study, and found that the device has photoresponse characteristics and the I–V characteristic curve was asymmetric, we explain that it was due to the asymmetry of this fully nanostructured devices.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China under Grant (Nos. U1631110). The authors would like to acknowledge the Center for Electron Microscopy at Wuhan University for their substantial supports to TEM work.

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Authors and Affiliations

  1. School of Physics and Technology, Wuhan University, Wuhan, 430072, People’s Republic of China

    Tianxiong Wang & Xianquan Meng

  2. Hubei Nuclear Solid Physics Key Laboratory, Wuhan University, Hubei, 430072, People’s Republic of China

    Xianquan Meng

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  1. Tianxiong Wang
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  2. Xianquan Meng
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Correspondence to Xianquan Meng.

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Wang, T., Meng, X. One-step fabrication of InxGa1−xSb nanowires by vapor transport method. J Mater Sci: Mater Electron 30, 17440–17446 (2019). https://doi.org/10.1007/s10854-019-02094-2

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