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Enhanced ferroelectric properties and crystal structure of TGS0.74P0.26 single crystals

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Abstract

The single crystals of triglycine sulpho phosphate (TGS0.74P0.26) were grown by slow evaporation method with 0.6 M of phosphoric acid in the growth solution. The crystal structure of the grown crystal is refined with 0.74 sulphur and 0.26 phosphorous occupancy with the formula of TGS0.74P0.26 using single crystal x-ray diffraction analysis. The dielectric, ferroelectric and pyroelectric properties of the TGS0.74P0.26 single crystals were investigated. The coercive field (Ec) and internal bias field (Ib) values are 8 kV/cm and 1.4 kV/cm, respectively and these values are found increased compared to the pure TGS and also low dielectric loss was observed. The pyroelectric coefficient of TGS0.74P0.26 crystal is 0.023 µC/cm2/°C and the pyroelectric figure of merit for current, voltage and detectivity are Fi = 105 pm/V, Fv = 0.055 m2/C and Fd = 22 µPa−1/2 respectively. Enhanced ferroelectric properties were observed when compared to the pure TGS crystals. The figure of merit for the detectivity (Fd) shows higher values when compared with that of the well-known materials such as PZT (11.5 µPa−1/2) and other lead free materials such as SBN (7.21 µPa−1/2) and CSBN (12 µPa−1/2). With these excellent properties, the TGS0.74P0.26 single crystal can be a promising material for the pyroelectric detector applications.

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Acknowledgements

Authors would like to acknowledge the Defence Research and Development Organization (DRDO), New Delhi, Government of India for providing the financial support to carry out the research through DRDO-BU  CLS, Phase-II Programme.

Funding

This study was funded by Defence Research and Development Organization (DRDO), New Delhi, Government of India through DRDO-BU  CLS, Phase-II Programme (Grant No. DLS/86/50071/DRDO-BU Centre/Phase-II dated 20th February 2014).

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Authors and Affiliations

  1. Crystal Growth Laboratory, Physics Division, DRDO-BU Center for Life Sciences, Bharathiar University Campus, Coimbatore, Tamil Nadu, 641046, India

    Sampathkumar Pongiappan & Srinivasan Karuppannan

  2. Crystal Growth Laboratory, Department of Physics, School of Physical Sciences, Bharathiar University, Coimbatore, Tamil Nadu, 641 046, India

    Srinivasan Karuppannan

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  1. Sampathkumar Pongiappan
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  2. Srinivasan Karuppannan
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Correspondence to Srinivasan Karuppannan.

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Pongiappan, S., Karuppannan, S. Enhanced ferroelectric properties and crystal structure of TGS0.74P0.26 single crystals. J Mater Sci: Mater Electron 30, 16494–16501 (2019). https://doi.org/10.1007/s10854-019-02024-2

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