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Synthesis and characterization of the ultra-thin SnS flakes and the micron-thick SnS crystals by chemical vapor deposition

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Abstract

Stannous sulfide (SnS) was grown on SiO2/Si substrates via chemical vapor deposition technique and characterized using optical microscopy, scanning electronic microscopy, X-ray diffraction, Raman spectroscopy, transmission electron microscopy, atomic force microscopy and photoluminescence (PL) spectrum, respectively. The results indicate that SnS with two distinct morphologies of “the ultra-thin SnS flakes and the micron-thick SnS crystals” can be grown on different zones of the SiO2/Si substrate. The ultra-thin SnS flakes are single crystal with thickness of 139 nm and maximum lateral sizes of 371 μm. However, the micron-thick SnS crystals are 2.2 μm-thick and a lateral size of 15 μm with square shape. The difference in morphology between the ultra-thin SnS flakes and the micron-thick SnS crystals is mainly due to the difference in the initial nucleation way. Both the ultra-thin SnS flakes and the micron-thick SnS crystals are orthorhombic structure with high-purity. PL strong peak of the ultra-thin SnS flakes is at 950 nm, and it is at 945 nm for the micron-thick SnS crystals. Their optical band gap is approximately 1.31 eV.

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Acknowledgements

This work has been financially supported by the Science and Technology Program of the Guangdong Province of China (Grant No. 2016A010104020).

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Authors and Affiliations

  1. Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology, Guangzhou, 510006, China

    Daizhe Yu, Qiu Li, Aixiang Wei, Yu Zhao, Jun Liu & Zhiming Xiao

  2. Department of Information Science, Xin Hua College of Sun Yat-Sen University, Guangzhou, 510520, China

    Aixiang Wei

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  1. Daizhe Yu
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  2. Qiu Li
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  3. Aixiang Wei
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  4. Yu Zhao
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Correspondence to Aixiang Wei.

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Yu, D., Li, Q., Wei, A. et al. Synthesis and characterization of the ultra-thin SnS flakes and the micron-thick SnS crystals by chemical vapor deposition. J Mater Sci: Mater Electron 30, 10879–10885 (2019). https://doi.org/10.1007/s10854-019-01431-9

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  • DOI: https://doi.org/10.1007/s10854-019-01431-9

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