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Bipolar resistance switching properties of pulse laser deposited a-ZrO2/a-IGZO transparent heterojunction

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Abstract

Transparent resistive switching characteristics of amorphous ZrO2 (a-ZrO2) based memory film with amorphous In and Ga co-doped ZnO (a-IGZO) conducting electrode were investigated. a-ZrO2/a-IGZO heterojunction was fabricating using pulse laser deposition techniques on quartz substrate. Structural, surface, electrical, and optical properties of a-ZrO2/a-IGZO heterojunction were investigated at room temperature. Smooth surface morphology and amorphous nature of the structure has been confirmed from the atomic force microscopy (AFM) and grazing incident X-ray diffraction (GIXRD) analysis. a-ZrO2/a-IGZO heterojunction has optical transmission exceeding 80% in visible light of electromagnetic spectrum. I–V characteristics show a forming free, bipolar resistance switching type behavior. Migration of oxygen ions from IGZO layer through ZrO2 layer creating the oxygen vacancy filament play an important role in the forming free resistive switching.

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Authors and Affiliations

  1. Department of Physics, University School of Sciences, Gujarat University, Ahmedabad, 380 009, India

    Bhaumik V. Mistry & U. S. Joshi

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  1. Bhaumik V. Mistry
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  2. U. S. Joshi
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Correspondence to Bhaumik V. Mistry.

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Mistry, B.V., Joshi, U.S. Bipolar resistance switching properties of pulse laser deposited a-ZrO2/a-IGZO transparent heterojunction. J Mater Sci: Mater Electron 29, 13687–13691 (2018). https://doi.org/10.1007/s10854-018-9497-y

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  • DOI: https://doi.org/10.1007/s10854-018-9497-y

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