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Spin accumulation at nonmagnetic interface induced by direct Rashba–Edelstein effect

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Abstract

Rashba effect describes how electrons moving in an electric field experience a momentum dependent magnetic field that couples to the electron angular momentum (spin). This physical phenomenon permits the generation of spin polarization from charge current (Edelstein effect), which leads to the buildup of spin accumulation. Spin accumulation due to Rashba–Edelstein effect has been recently reported to be uniform and oriented in plane, which has been suggested for applications as spin filter device and efficient driving force for magnetization switching. Here, we report the X-ray spectroscopy characterization Rashba interface formed between nonmagnetic metal (Cu, Ag) and oxide (Bi2O3) at grazing incidence angles. We further discuss the generation of spin accumulation by injection of electrical current at these Rashba interfaces, and its optical detection by time resolved magneto optical Kerr effect. We provide details of our characterization which can be extended to other Rashba type systems beyond those reported here.

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Acknowledgements

We acknowledge Yoshio Maebashi for technical support. This work was supported by Grant-in-Aid for Scientific Research on Innovative Area, “Nano Spin Conversion Science” (Grant No. 26103002) and RIKEN Incentive Research Project Grant No. FY2016. F.A. was supported by the Ministry of Education, Culture, Sports, Science and Technology (MEXT) Scholarship, Japan.

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Authors and Affiliations

  1. Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba, 277-8581, Japan

    Florent Auvray, Mingran Xu & Yoshichika Otani

  2. RIKEN Center for Emergent Matter Science, Wako, Saitama, 351-0198, Japan

    Jorge Puebla, Bivas Rana, Daisuke Hashizume & Yoshichika Otani

Authors
  1. Florent Auvray
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  2. Jorge Puebla
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  3. Mingran Xu
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  5. Daisuke Hashizume
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  6. Yoshichika Otani
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Correspondence to Jorge Puebla.

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Auvray, F., Puebla, J., Xu, M. et al. Spin accumulation at nonmagnetic interface induced by direct Rashba–Edelstein effect. J Mater Sci: Mater Electron 29, 15664–15670 (2018). https://doi.org/10.1007/s10854-018-9162-5

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  • DOI: https://doi.org/10.1007/s10854-018-9162-5

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