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Preparation and mechanism analysis of polycrystalline silicon thin films with preferred orientation on graphite substrate

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Abstract

In this paper, we prepared polycrystalline silicon (poly-Si) thin films on polished graphite substrate by magnetron sputtering and systematically investigated the effects of substrate temperature and deposition time on preparation of poly-Si thin films. The poly-Si thin films were characterized by X-ray diffraction, Raman spectroscopy (Raman) and Scanning electron microscopy, which showed that the samples presented high crystallization quality. The mechanisms of Si(220) preferred orientation and the conversion from Si(220) to Si(111) were explained by Principle of the lowest energy, Bravais rule and the Classical nucleation theory. We can prepare poly-Si thin films with Si(111) or Si(220) preferred orientation by controlling the substrate temperature and deposition time, which is important for preparing high efficient solar cells.

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Acknowledgements

We are grateful to the Natural Science Foundation of Beijing (2151004), National Natural Science Foundation (51602022) and the Fundamental Research Funds for the Central Universities (2016MS50) in China for generous support of our research.

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Authors and Affiliations

  1. State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Beijing, 102206, China

    Lishuai Wei, Nuofu Chen, Kai He, Quanli Tao, Congjie Wang & Yiming Bai

  2. School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China

    Jikun Chen

  3. School of Renewable Energy, North China Electric Power University, Beijing, 102206, China

    Nuofu Chen

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  1. Lishuai Wei
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  2. Nuofu Chen
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  3. Kai He
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  4. Quanli Tao
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  5. Congjie Wang
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  6. Yiming Bai
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  7. Jikun Chen
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Correspondence to Nuofu Chen or Jikun Chen.

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Wei, L., Chen, N., He, K. et al. Preparation and mechanism analysis of polycrystalline silicon thin films with preferred orientation on graphite substrate. J Mater Sci: Mater Electron 29, 1377–1383 (2018). https://doi.org/10.1007/s10854-017-8044-6

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  • DOI: https://doi.org/10.1007/s10854-017-8044-6

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