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Improved microstructure, thermal and tensile properties of Zn and graphine oxide nano sheets (GONSs) doped Sn–1 wt%Ag–0.5 wt%Cu for electronic assemblies

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Abstract

Effect of Zn and Graphine-Oxide Nano-Sheets (GONSs) on thermal, microstructure and tensile properties of Sn–1.0 wt%Ag–0.5 wt%Cu (SAC105) plain solder is investigated in the current work. Experimental results showed that the addition of 1.0 wt% Zn to the plain SAC105 solder remarkably decreased the melting temperature by 2.2 °C accompanied by a decrease in the pasty range from 20.4 to 18.7 °C. Further decrease by 5.1 °C in the melting temperature due to the addition of 0.2 wt% GONSs to the SAC105-1 wt% Zn besides a decrease in the pasty range from 18.7 to 16 °C was observed. Microstructure characterization results revealed the uniform distribution of the reinforcement particles in the matrix, therefore these particles acts as an effective reinforcing filler to increase the resistance to deformation. Tensile results showed that the addition of Zn and GONSs to SAC105 solder alloy, lead to increase in the yield strength, ultimate tensile strength (UTS) and changing failure strain. Scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD) were used to investigate the surface, elemental, and phase composition, respectively.

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Authors and Affiliations

  1. Physics Department, Faculty of Education, Ain Shams University, Cairo, Egypt

    M. Sobhy, M. A. Mahmoud, J. A. Fawzy, A. Fawzy & G. Saad

  2. Physics Department, National Centre for Radiation Research and Technology, Nasr City, Cairo, Egypt

    S. A. Fayek

Authors
  1. M. Sobhy
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  2. M. A. Mahmoud
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  3. S. A. Fayek
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  4. J. A. Fawzy
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  5. A. Fawzy
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  6. G. Saad
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Correspondence to A. Fawzy.

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Sobhy, M., Mahmoud, M.A., Fayek, S.A. et al. Improved microstructure, thermal and tensile properties of Zn and graphine oxide nano sheets (GONSs) doped Sn–1 wt%Ag–0.5 wt%Cu for electronic assemblies. J Mater Sci: Mater Electron 28, 19181–19192 (2017). https://doi.org/10.1007/s10854-017-7877-3

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  • DOI: https://doi.org/10.1007/s10854-017-7877-3

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