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Optical and electrical smart response of chemically stabilized graphene oxide

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Abstract

Graphene oxide (GO) was prepared using a modified Hammer’s technique and by utilizing a sonochemical approach. The paper deals with the synthesis and the characterization of GO besides the structural, morphological, optical and electrical properties of GO. Phase formation of the prepared sample was examined with powder X-ray diffraction (XRD), the typical surface morphology was carried out by utilizing Scanning electron microscopy (SEM) and the high resolution Transmission Electron Microscopy (HR-TEM). The different functional groups were recognized by utilizing FT-IR and Raman spectroscopy. The optical properties were studied utilizing optical absorption and photoluminescence (PL) spectra. At various frequencies and temperatures the dielectric properties of the GO, such as the dielectric constant, the dielectric loss, and AC conductivity were studied. Further, the electrical behaviour of GO was analysed using I-V and C-V characteristics. These novel findings shed focus on high yield electronic material GO, which can only be realized as the field moves forward and makes more significant advances in smart opto-electronic devices.

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Authors and Affiliations

  1. Department of Physics, AMET University, Chennai, 603 112, India

    Suresh Sagadevan

  2. Department of ECE, AMET University, Chennai, 603 112, India

    Isha Das

  3. Chief-Scientist and Faculty Fellow, Wuhan University, Engineering Science Building, Wuhan, 430072, Hubei, Republic of China

    Kaushik Pal

  4. Department of Physics, Saveetha Engineering College, Thandalum, Chennai, 602105, India

    Priya Murugasen

  5. Bio/Polymers Research Laboratory, Department of Chemistry, Jamia Millia Islamia, New Delhi, India

    Prithi Singh

Authors
  1. Suresh Sagadevan
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  2. Isha Das
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  4. Priya Murugasen
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Correspondence to Suresh Sagadevan.

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Sagadevan, S., Das, I., Pal, K. et al. Optical and electrical smart response of chemically stabilized graphene oxide. J Mater Sci: Mater Electron 28, 5235–5243 (2017). https://doi.org/10.1007/s10854-016-6180-z

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  • DOI: https://doi.org/10.1007/s10854-016-6180-z

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