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Size-controlled Si quantum dots embedded in B-doped SiNx/Si3N4 superlatice for Si quantum dot solar cells

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Abstract

Under the condition of the fixed Si3N4 layer thickness of 1.1 nm, Si-QDs embedded in B-doped SiNx/Si3N4 multilayer thin films with various SiNx layer thickness were fabricated respectively. Si-QDs with controllable and nearly uniform size were formed in SiNx layers, and found that the optical band gap of the films can be adjusted by changing the thickness of SiNx layer. On the basis of this, the Si-QDs/c-Si heterojunction solar cells were prepared. It is found that the larger the band gap is, the higher the cell efficiency is. The best performance device is obtained with average QD size of ~3.5 nm, which has the highest efficiency of 7.05 % compared with the other two devices. This difference is caused by the difference of the spectral response of these devices.

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  • 28 February 2017

    An erratum to this article has been published.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China (Grant No. 51362031), Collaborative Innovation Center of Research and Development of Renewable Energy in the Southwest Area (Grant No. 05300205020516009), A Project Supported by Scientific Research Fund of SiChuan Provincial Education Department (16ZB0356, 16ZA0355), and Scholarship Award for Excellent Doctoral Student granted by Yunnan Province.

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Authors and Affiliations

  1. School of New Energy and Electronic Engineering, Yancheng Teachers University, Yancheng, 224051, China

    Xiaobo Chen

  2. Key Laboratory of Education Ministry for Advance Technique and Preparation of Renewable Energy Materials, Institute of Solar Energy, Yunnan Normal University, Kunming, 650092, China

    Wen Yang, Peizhi Yang, Junbao Yuan & Fei Zhao

  3. School of Intelligent Manufacturing, Sichuan University of Arts and Science, Dazhou, 635000, China

    Jiabo Hao & Yu Tang

Authors
  1. Xiaobo Chen
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  2. Wen Yang
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  3. Peizhi Yang
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  7. Yu Tang
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Correspondence to Peizhi Yang.

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An erratum to this article is available at https://doi.org/10.1007/s10854-017-6565-7.

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Chen, X., Yang, W., Yang, P. et al. Size-controlled Si quantum dots embedded in B-doped SiNx/Si3N4 superlatice for Si quantum dot solar cells. J Mater Sci: Mater Electron 28, 1322–1327 (2017). https://doi.org/10.1007/s10854-016-5663-2

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  • DOI: https://doi.org/10.1007/s10854-016-5663-2

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