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In situ preparation of high quality BaTiO3 dielectric films on Si at 350–500 °C

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Abstract

Reducing thermal budget of functional layers grown on Si substrates has become a necessity for their integration into contemporary manufacturing technology of microelectronics. The work presented here exemplifies one of such efforts by preparing barium titanate (BaTiO3 or BTO) films at temperatures as low as 350 °C on Si substrates via a CMOS-compatible RF-magnetron sputtering process. In this study, X-ray diffraction (XRD) results reveal that use of LaNiO3 (LNO) buffer layer successfully induces BaTiO3 film’s transition from polycrystalline to highly c-axis oriented tetragonal in low temperature range. Moreover, encouraged by BaTiO3 films prepared at 500 °C that shows a nearly uniform (00l) orientation with excellent ferroelectric properties (Pr ~ 2.6 μC/cm2, Ec ~ 100 kV/cm, d33 ~ 150 pm/V), we further push the deposition temperature down to 350 °C. While showing reduced crystallinity, these lower temperature films still possess good dielectric properties which are characterized by a stable dielectric constant of 110 ± 5 and a small dielectric loss between 0.7 and 3 % in the frequency range of [1 kHz, 2 MHz]. We believe the finding of high quality BaTiO3 films achievable at 350 °C is meaningful in that it paves the road for BaTiO3’s real application in Si based CMOS technology.

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Acknowledgments

The authors acknowledge the financial support from the Program for New Century Excellent Talents in University (State Education Ministry), as well as the State Key Laboratory of New Ceramic and Fine Processing (Tsinghua University). J. Ouyang would also like to thank the “Qi-Lu Young Scholar Fund” of Shandong University, the project sponsored by the Scientific Research Foundation (SRF) for the Returned Overseas Chinese Scholars, State Education Ministry (ROCS, SEM), and Key Cultivating Projects of The Interdisciplinary Research in Shandong University (Grant No. 2015JC034). Y. Gao and J. Ouyang acknowledge the financial support of the Nanotechnology Projects of Soochow City (Grant # ZXG201445) and the Independent Innovation Foundation of Shandong University (Grant No. 2015YQ009).

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Authors and Affiliations

  1. Suzhou Institute of Shandong University, Suzhou, 215123, China

    Yiqun Gao & Jun Ouyang

  2. Key Laboratory for Liquid–Solid Structural Evolution and Processing of Materials, School of Materials Science and Engineering, Shandong University, Jinan, 250061, China

    Yiqun Gao, Meiling Yuan & Jun Ouyang

  3. Office of Academic Affairs, Civil Aviation University of China, Tianjin, 300300, China

    Meiling Yuan

  4. Center for Materials, Devices and Integrated Systems, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA

    Xin Sun

  5. National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA

    Jun Ouyang

Authors
  1. Yiqun Gao
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  2. Meiling Yuan
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  3. Xin Sun
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  4. Jun Ouyang
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Corresponding authors

Correspondence to Xin Sun or Jun Ouyang.

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Certain commercial equipment, instruments, or materials are identified in this paper to adequately specify the experimental procedure. Such identification does not imply recommendation or endorsement by the National Institute of Standards and Technology (NIST), nor does it imply that the materials or equipment identified are necessarily the best available for the purpose.

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Gao, Y., Yuan, M., Sun, X. et al. In situ preparation of high quality BaTiO3 dielectric films on Si at 350–500 °C. J Mater Sci: Mater Electron 28, 337–343 (2017). https://doi.org/10.1007/s10854-016-5528-8

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  • DOI: https://doi.org/10.1007/s10854-016-5528-8

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