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Effect of Si on near-infrared long persistent phosphor Zn3Ga2Ge2−x Si x O10:2.5 %Cr3+

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Abstract

Advanced long persistent near-infrared phosphors Zn3Ga2Ge2−xSixO10:2.5 %Cr3+ (x = 0, 0.6, 1, 1.4, 2) were synthesized by solid-state reaction method. The duration of afterglow can last more than 30 h after stoppage of the 365 nm ultraviolet light irradiation. Specifically, Si4+ substituting Ge4+ can increase the afterglow time but attenuate light emission intensity by introducing deep level of traps. We discussed the mechanism to balance the persistent luminescence intensity and afterglow time, which has significant potential for applications and future research of super long bright persistent luminescence phosphors.

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Acknowledgments

This work is supported by the National Natural Science Fund of China (No.51462003, No.61404033) and Science Research Fund of Guizhou Province, China (Nos. 2013-7012).

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Authors and Affiliations

  1. Department of Electronic Science, College of Big Data and Information Engineering, Guizhou University, Guiyang, 550025, Guizhou, China

    Fengjuan Shen, Chaoyong Deng, Xu Wang, Chi Zhang & Wei Liu

  2. School of Electrical and Electronic Engineering, ChongQing University of Arts and Science, Chongqing, 402160, China

    Fengjuan Shen

Authors
  1. Fengjuan Shen
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  2. Chaoyong Deng
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  3. Xu Wang
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  4. Chi Zhang
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  5. Wei Liu
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Correspondence to Chaoyong Deng or Xu Wang.

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Shen, F., Deng, C., Wang, X. et al. Effect of Si on near-infrared long persistent phosphor Zn3Ga2Ge2−x Si x O10:2.5 %Cr3+ . J Mater Sci: Mater Electron 27, 9067–9072 (2016). https://doi.org/10.1007/s10854-016-4940-4

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  • DOI: https://doi.org/10.1007/s10854-016-4940-4

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