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Properties of chemically-deposited nanocrystalline MoS2 thin films

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Abstract

Molybdenum disulfide thin films have been deposited from an aqueous acidic bath using sodium thiosulphate as sulphide ion source. The various preparative parameters are optimized and growth mechanism is discussed. X-ray diffraction analysis reveals that the films are polycrystalline in nature with hexagonal structure. A microstructural study has been carried out by field emission scanning electron microscopy. EDAX analysis shows that the films are nearly stoichiometries of the Mo:S i.e. 1:2. Electrical conductivity was found to be in the order of 10−5–10−3 (Ω cm)−1. From optical absorption studies the energy band gap of MoS2 is estimated to be 1.7 eV.

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Acknowledgments

Authors are thankful to SERB-DST, New Delhi for the financial support under project NO.SB/FT/CS-018/2013.

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Authors and Affiliations

  1. Department of Chemistry, KIT’s College of Engineering, Kolhapur, M.S., India

    D. J. Sathe, S. B. Sargar, S. V. Kite & Z. D. Sande

  2. Department of Chemistry, JSM College, Alibag, Raigad, M.S., India

    P. A. Chate

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  1. D. J. Sathe
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Correspondence to D. J. Sathe.

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Sathe, D.J., Chate, P.A., Sargar, S.B. et al. Properties of chemically-deposited nanocrystalline MoS2 thin films. J Mater Sci: Mater Electron 27, 3834–3838 (2016). https://doi.org/10.1007/s10854-015-4230-6

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  • DOI: https://doi.org/10.1007/s10854-015-4230-6

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