Abstract
We report on studies of the X-ray photoelectron core-level and valence-band spectra for pristine and Ar+-ion bombarded surfaces of (Ga55In45)2S300 and (Ga54.59In44.66Er0.75)2S300 single crystals grown by solution-melt technique. The (Ga55In45)2S300 and (Ga54.59In44.66Er0.75)2S300 single crystals were found to be very rigid with respect to Ar+-ion bombardment. In particular, such a treatment did not cause any significant changes of values of the binding energies of core-level electrons as well as of the shapes of the XPS core-level and valence-band spectra of (Ga55In45)2S300 and (Ga54.59In44.66Er0.75)2S300 single crystal surfaces. We measured for the (Ga55In45)2S300 compound the X-ray emission bands representing the energy distribution of mainly the valence S p and Ga p states and compared them on a common energy scale with the XPS valence-band spectrum. The comparison allows us for concluding that the S 3p and Ga 4p states contribute mainly at the top and in the central portion of the valence band of (Ga55In45)2S300, respectively. In addition, we have also detected at ambient conditions a strong photoluminescence of the (Ga54.59In44.66Er0.75)2S300 single crystal with a maximum at 810 nm for the excitation wavelength of 532 nm. Our results indicate that the (Ga54.59In44.66Er0.75)2S300 single crystal is a very promising material for its application in optoelectronic technologies.
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This work was partially supported by the Project of Ministry of Education and Science of Ukraine (No. 0115U 002348).
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Khyzhun, O.Y., Halyan, V.V., Danyliuk, I.V. et al. Electronic structure of (Ga55In45)2S300 and (Ga54.59In44.66Er0.75)2S300 single crystals. J Mater Sci: Mater Electron 27, 3258–3264 (2016). https://doi.org/10.1007/s10854-015-4153-2
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DOI: https://doi.org/10.1007/s10854-015-4153-2