Abstract
\(\hbox {Ba}_{0.85}\hbox {Sr}_{0.15}\hbox {Ti}_{0.9}\hbox {Fe}_{0.1}\hbox {O}_{3}\) (BSTF) powder has been synthesized by solid-state reaction in aim to develop lead-free semiconductor gas sensors. Thick BSTF films were therefore deposited on alumina substrates coated by silver–palladium (Ag–Pd) bottom electrodes and then sintered at 1100 °C for 2 h. These films were physically and electrically characterized. The dielectric constant, loss tangent and conductivity evolutions were investigated in extended frequency and temperature ranges and compared to results given by a non doped barium titanate thick film. A huge increase of the BSTF conductivity variation, by a factor of 10,000 at low frequency when the temperature ranges from 25 to 500 °C, was observed. This behaviour, associated to a relaxation mechanism governed by the migration of oxygen vacancies, has led to a drastic change of the BSTF conductivity.
Similar content being viewed by others
References
M. Mascot, D. Fasquelle, J.C. Carru, Very high tunability of BaSnxTi1−xO3 ferroelectric thin films deposited by sol–gel. Funct. Mater. Lett. 4, 49–52 (2011)
D. Fasquelle, M. Mascot, J.C. Carru, On the research of lead-free material challengers for PZT replacement. Solid State Electron. 75, 6–12 (2012)
M. Mascot, Elaboration par méthode sol–gel de films minces ferroélectriques sans plomb pour des applications en électronique, Ph.D. Thesis, University of Littoral Côte dOpale, (2009)
D. Fasquelle, S. Députier, M. Mascot, N. Uschanoff, V. Bouquet, V. Demange, M. Guilloux-Viry, J.C. Carru, Lead-free oxide thin films for gas detection. Adv. Mater. Res. 789, 105–111 (2013)
M. Cole, P. Joshi, M. Ervin, La doped Ba1−xSrxTiO3 thin films for tunable device applications. J. Appl. Phys. 89, 6336–6340 (2001)
X. Chou, J. Zhai, X. Yao, Relaxor behavior and dielectric properties of La2O3-doped barium zirconium titanate ceramics for tunable device applications. Mater. Chem. Phys. 109, 125–130 (2008)
S.B. Herner, F.A. Selmi, V.V. Varadan, V.K. Varadan, The effect of various dopants on the dielectric properties of barium strontium titanate. Mater. Lett. 15, 317–324 (1993)
M. Lorenz, H. Hochmuth, M. Schallner, R. Heidinger, D. Spemann, M. Grundmann, Dielectric properties of Fe-doped BaxSr1−xTiO3 thin films on polycrystalline substrates at temperatures between −25 °C and +85 °C. Solid State Electron. 47, 2199–2203 (2003)
Z. Yuan, Y. Lin, J. Weaver, X. Chen, C.L. Chen, G. Subramanyam, J.C. Jiang, E.I. Meletis, Large dielectric tunability and microwave properties of Mn-doped (BaSr)TiO3 thin films. Appl. Phys. Lett. 78, 152901–152901 (2005)
K. Chong, L. Kong, L. Chen, L. Yan, C. Tan, T. Yang, C. Ong, T. Osipowicz, Improvement of dielectric loss tangent of Al2O3 doped Ba0.5Sr0.5TiO3 thin films for tunable microwave devices. J. Appl. Phys. 95, 1416–1419 (2004)
M. Cole, C. Weiss, E. Ngo, S. Hirsch, L. Coryell, S. Alpay, Microwave dielectric properties of graded barium strontium titanate films. Appl. Phys. Lett. 92, 182906–182906 (2008)
B. Su, T. Button, Microstructure and dielectric properties of Mg-doped barium strontium titanate ceramics. J. Appl. Phys. 95, 1382–1385 (2004)
L. Xiao, K.L. Choy, I. Harrison, Co-doped BST thin films for tunable microwave applications. Surf. Coat. Technol. 205, 2989–2993 (2011)
J. Nowotny, M. Rekas, Positive temperature coefficient of resistivity for BaTiO3-based materials. Ceram. Int. 17, 227–241 (1991)
E. Brzozowski, M.S. Castro, Conduction mechanism of barium titanate ceramics. Ceram. Int. 26, 265–269 (2000)
Y. Ye, T. GUO, Dielectric properties of Fe-doped Ba0.65Sr0.35TiO3 thin films fabricated by the sol–gel method. Ceram. Int. 35, 2761–2765 (2009)
O. Nur, M. Willander, M.Q. Israr, F. Desouky, M.A. Salem, A.B. Abou hamad, I.K. Battisha, Effect of elevated concentrations of strontium and iron on the structural and dielectric characteristics of Ba(1−x−y)Sr(x)TiFe(y)O3 prepared through sol–gel technique. Phys. B 407, 2697–2704 (2012)
X.K. Wei, Y.T. Su, Y. Sui, Q.H. Zhang, Y. Yao, C.Q. Jin, R.C. Yu, Structure, electrical and magnetic property investigations on dense Fe-doped hexagonal BaTiO3. J. Appl. Phys. 110, 114112 (2011)
B. Stojanovic, C. Foschini, V. Pejovic, V. Pavlovic, J. Varela, Electrical properties of screen printed BaTiO3 thick films. J. Eur. Ceram. Soc. 24, 1467–1471 (2004)
Z. Guo, L. Pan, C. Bi, H. Qiu, X. Zhao, L. Yang, M.Y. Rafique, Structural and multiferroic properties of Fe-doped Ba0.5Sr0.5TiO3 solids. J. Magn. Magn. Mater. 325, 24–28 (2013)
Q. Zhang, J. Zhai, Q. Ben, X. Yu, X. Yao, Enhanced microwave dielectric properties of Ba0.4Sr0.6TiO3 ceramics doping by metal Fe powders. J. Appl. Phys. 112, 104104 (2012)
C.J. Johnson, Some dielectric and electro-optic properties of BaTiO3 single crystals. Appl. Phys. Lett. 7, 221–223 (1965)
S. Gevorgian, Ferroelectrics in Microwave Devices: Circuits and Systems (Springer, New York, 2009)
C. Ang, Z. Yu, L.E. Cross, Oxygen-vacancy-related low-frequency dielectric relaxation and electrical conduction in Bi:SrTiO3. Phys. Rev. B 62, 228 (2000)
S. Saha, S.B. Krupanidhi, Dielectric response and complex impedance spectroscopy studies in pulsed laser ablated (BaSr)TiO3 thin films. Integr. Ferroelectr. 33, 331–342 (2001)
D. Fasquelle, J.C. Carru, Electrical characterizations of PZT ceramics in large frequency and temperature ranges. J. Eur. Ceram. Soc. 28, 2071–2074 (2008)
A. Rothschild, S.J. Litzelman, H.L. Tuller, W. Menesklou, T. Schneider, E. Ivers-Tiffée, Temperature-independent resistive oxygen sensors based on SrTi1−xFexO3−δ solid solutions. Sens. Actuators B Chem. 108, 223–230 (2005)
S. Steinsvik, R. Bugge, J. Gjønnes, J. Taftø, T. Norby, The defect structure of SrTi1−xFexO3−y (x = 0 − 0.8) investigated by electrical conductivity measurments and electron energy loss spectroscopy (EELS). J. Phys. Chem. Solids 58, 969–976 (1997)
Acknowledgments
Francis Gouttefangeas is acknowledged for SEM images performed at CMEBA (ScanMAT, University of Rennes 1) which received a financial support from the European Union (CPER-FEDER, 2007–2014).
Author information
Authors and Affiliations
Corresponding author
Additional information
This study, occurring within the French research project titled OSPEGAZ (ANR 11 ECOT 01201, 2012–2015), is funded by the French Agency of Research (ANR Agence Nationale de la Recherche).
Rights and permissions
About this article
Cite this article
El Romeh, M.A., Fasquelle, D., Députier, S. et al. Extended semiconducting behaviour of \(\hbox {Ba}_{0.85}\hbox {Sr}_{0.15}\hbox {Ti}_{0.9}\hbox {Fe}_{0.1}\hbox {O}_3\) thick films in large temperature range. J Mater Sci: Mater Electron 27, 2096–2102 (2016). https://doi.org/10.1007/s10854-015-3996-x
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10854-015-3996-x