Abstract
Structure and temperature dependence of electrical properties of Ca(Bi,La)4Ti4O15–(Bi,La)4Ti3O12 (CBT–BIT–xLa) ceramics were studied. With La3+ doping content increasing, the samples exhibited diffused dielectric constant anomalies, and the Curie temperature (Tc) decreased. Meanwhile, the dielectric loss of CBT–BIT–xLa was reduced. CBT–BIT–0.8La performed an improved piezoelectric constant (d33) value of 23.4 pC/N and remained until the temperature increased to 500 °C. In addition, CBT–BIT–0.8La performed an enhanced ρdc value of 3.26 × 1015 Ω cm, at room temperature. CBT–BIT–0.8La showed clearly higher dc resistivity (ρdc) than CBT–BIT, even with increasing the temperature to 600 °C.
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The authors acknowledge the financial support by the National Natural Science Foundation of China (Grant No. 11304334).
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Fei, L., Zhou, Z., Hui, S. et al. Effects of La3+ substitution on structure and temperature dependence of electrical properties of CaBi4Ti4O15–Bi4Ti3O12 ceramics. J Mater Sci: Mater Electron 26, 6843–6847 (2015). https://doi.org/10.1007/s10854-015-3299-2
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DOI: https://doi.org/10.1007/s10854-015-3299-2