Abstract
Bi2/3Cu3Ti4O12 ceramics were synthesized by the sol–gel method. The optimum parameters for the synthesis of precursor powders were as follows: the Ti concentration was 0.62 mol/L, the aging time of the sol was 16 h and the reaction temperature was 40 °C. When calcined at 800 °C and sintered at 1,000 °C, Bi2/3Cu3Ti4O12 ceramics with the highest density and fine-grained microstructure were obtained. The resultant ceramics showed outstanding dielectric properties with a dielectric constant (ε′) of ~1.2 × 104 measured at 1 kHz. The dielectric constant was much higher than that of the ceramics with same composition prepared by the solid-state reaction (~0.30 × 104 at 1 kHz). A unique phenomenon was observed in the temperature dependence of dielectric constant. Dielectric relaxation I occurred at ~200 °C was due to the Maxwell–Wagner relaxation. Whereas an additional dielectric relaxation II was observed at ~300 °C only for the sample prepared by the sol–gel method, which was ascribed to the distribution state transition for oxygen vacancies.
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Acknowledgments
This work was supported by National Science Foundation of China (NSFC) (Grant Nos. 51172136 and 51107077) and the Fundamental Research Funds for the Central Universities (Program Nos. GK201101003, GK201101004, GK201301002, GK201305013 and GK201403006) and Science and Technology Program of Shaanxi Province and Xi’an City (Grant Nos. 2013K09-26 and CXY1342(4)).
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Yang, Z., Liang, P., Yang, L. et al. Synthesis, dielectric properties of Bi2/3Cu3Ti4O12 ceramics by the sol–gel method. J Mater Sci: Mater Electron 26, 1959–1968 (2015). https://doi.org/10.1007/s10854-014-2635-2
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DOI: https://doi.org/10.1007/s10854-014-2635-2