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Effect of excess Bi content on the electrical properties of Bi0.95La0.05FeO3 thick films

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Abstract

BiFeO3 (BFO)-based ferroelectric films thicker than 1 µm are promising in dielectric, piezoelectric, and pyroelectric applications. However, using the common sol–gel technology to prepare BFO-based thick films is difficult because of crack formation and poor crystallization. In this study, we demonstrate that it is possible to prepare well-crystallized Bi0.95La0.05FeO3 (BLFO) thick films with a thickness of 1.4 µm by modifying excess Bi content. The effect of excess Bi content on the electrical properties of the BLFO thick film was investigated. Most excess Bi particles were found to be concentrated in the grain boundaries of thick films instead of volatilizing. Adding appropriate excess Bi when preparing BLFO thick films was also found to promote crystal growth and improve electrical properties.

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Acknowledgments

This work was supported by funding from National Natural Science Foundation of China (No 11104116), the Outstanding Young Scientists Foundation Grant of Shandong Province (No. BS2011CL003), and the Doctoral Foundation of University of Jinan, China (No. 161220).

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Authors and Affiliations

  1. School of Materials Science and Engineering, University of Jinan, Jinan, 250022, China

    Peng Du, Feng Yang, Xiaomei Zang & Chengcheng Qiu

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  1. Peng Du
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  2. Feng Yang
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  3. Xiaomei Zang
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  4. Chengcheng Qiu
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Correspondence to Feng Yang.

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Du, P., Yang, F., Zang, X. et al. Effect of excess Bi content on the electrical properties of Bi0.95La0.05FeO3 thick films. J Mater Sci: Mater Electron 25, 5316–5321 (2014). https://doi.org/10.1007/s10854-014-2307-2

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  • DOI: https://doi.org/10.1007/s10854-014-2307-2

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