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Non-toxic selenization using thermal annealing for CuGa/In bi-layer precursors deposited by sputtering

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Abstract

Cu(InxGa1−x)Se2 (CIGS) thin films were produced using a two-step sputtering process consisting of precursor formation and selenization. In the first stage, we prepared Cu0.75Ga0.25/In bi-layer precursors by direct current sputtering on Mo/soda-lime glass substrates. In the second stage, the stacked precursors were selenized using non-toxic Se pellets in a graphite box in which the temperature was controlled at 475–680 °C during rapid thermal annealing. We investigated the effect of thermal annealing temperature on Ga distribution and the crystallinity of the Cu(InxGa1−x)Se2 films. Thermal annealing significantly affected the distribution of Ga atoms. At low temperatures, segregation of Ga atoms into the CIGS/Mo interface and an absence of Ga content on the surface were observed. In addition, a phase-separated CuInSe2/CuGaSe2 structure and incomplete selenization phases were observed. At high temperatures, CIGS films were formed with the proper distribution of Ga content.

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Acknowledgments

This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (NRF-2012R1A2A4A01003849). This work was also financially supported by the Energy International Collaboration Research & Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Knowledge Economy (MKE) (2011-8520010050).

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  1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do, Republic of Korea

    Sung Hyun Chun, Yong Hun Kwon & Hyung Koun Cho

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  1. Sung Hyun Chun
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  2. Yong Hun Kwon
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Correspondence to Hyung Koun Cho.

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Chun, S.H., Kwon, Y.H. & Cho, H.K. Non-toxic selenization using thermal annealing for CuGa/In bi-layer precursors deposited by sputtering. J Mater Sci: Mater Electron 25, 3492–3497 (2014). https://doi.org/10.1007/s10854-014-2044-6

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