Abstract
The process of the silica glass doping with fluorine during its long-term high-temperature treatment at 2100–2300 °C in an oxygen atmosphere containing from 1 to 5 mol% SiF4 has been studied. With an increase in its concentration in the gas, the rate of gas-phase glass etching increases. Fluorine concentration in glass was estimated by refractometry and X-ray microanalyzer. It has been established that under conditions of chemical equilibrium of the silica glass surface with SiF4, an increase in temperature leads to a decrease in the fluorine content in the glass. The process of dissolving fluorine in glass is exothermic. The dependence of its doping degree on SiF4 pressure up to 5000 Pa is close to linear. Under equilibrium conditions, the fluorine content in silica glass is 2 times higher than under the conditions of a nonequilibrium MCVD process.
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Acknowledgements
The authors are thankful to Academician of the Russian Academy of Sciences, Professor V. G. Peshekhonov for supporting this work, A. A. Untilov for the scientific and technical helps and Tamkovich M. V. for electron microscope studies.
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M.A.E. was involved in conceptualization and writing original. A.Yu.K. contributed to methodology and investigation. M.K.T. was involved in formal analysis, calculations and writing draft. All the authors participated in discussion of the results and manuscript preparation.
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Eronyan, M.A., Kulesh, A.Y. & Tsibinogina, M.K. Doping silica glass with fluorine in equilibrium conditions at a temperature of more than 2000 °C. J Mater Sci 57, 11582–11589 (2022). https://doi.org/10.1007/s10853-022-07366-7
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DOI: https://doi.org/10.1007/s10853-022-07366-7