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Insights on boron impact on structural characteristics in epitaxially grown BGaN

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Abstract

It is shown that MOCVD growth allows to obtain BGaN epitaxial layers at growth temperature (Tgr) between 840 and 1090 °C. It is found that morphology of the epitaxial layers and amount of B replacing Ga strongly dependent on growth temperature. The SIMS determined that the total amount of B was constant for all growth temperatures. On the other hand, the X-ray measurements shown that amount of boron incorporated into gallium sites decreased from 2.5 to 0.73%, for Tgr changed from 840 to 1090 °C, respectively. That indicated that increase of growth temperature leads to transfer of B atoms from Ga substitutional sites to the interstitial positions. It was also shown that the c(x) lattice parameter for ternary BGaN alloys is well described by the standard interpolation formula. On the other hand, energy shifts observed in photoluminescence suggest that the layers are under dilatation strain.

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  • 03 April 2022

    This article was revised to correct a spelling error in the first author affiliation.

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Acknowledgements

This work was financially supported from the Grant No. 4/Ł-IMIF/CŁ/2021 funded by The Łukasiewicz Centre. Authors of the paper would like to thank professor Krzysztof P. Korona for photoluminescence measurements and for helpful discussions. Also, authors would like to thank Jacek Nizel for performing an epitaxial growth. Karolina Pietak acknowledges financial support from the IDUB project (Scholarship Plus programme).

Funding

This study was funded by The Łukasiewicz Centre (Grant Number 4/Ł-IMIF/CŁ/2021).

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Authors and Affiliations

  1. Łukasiewicz Research Network-Institute of Microelectronics and Photonics, Al. Lotników 32/46, 02-668, Warsaw, Poland

    Ewelina B. Możdżyńska, Sebastian Złotnik, Paweł Ciepielewski, Jarosław Gaca, Marek Wójcik, Paweł P. Michałowski, Krzysztof Rosiński, Karolina Piętak, Mariusz Rudziński & Jacek M. Baranowski

  2. Faculty of Materials Science and Engineering, Warsaw University of Technology, Wołoska 141, 02-507, Warsaw, Poland

    Ewelina B. Możdżyńska & Elżbieta Jezierska

  3. Institute of Applied Physics, Military University of Technology, Kaliskiego 2, 00-908, Warsaw, Poland

    Sebastian Złotnik

  4. Faculty of Chemistry, Warsaw University of Technology, Noakowskiego 3, 00-664, Warsaw, Poland

    Karolina Piętak

  5. Warsaw University of Technology, Doctoral School No 1, Plac Politechniki 1, 00-661, Warsaw, Poland

    Karolina Piętak

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  1. Ewelina B. Możdżyńska
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Możdżyńska, E.B., Złotnik, S., Ciepielewski, P. et al. Insights on boron impact on structural characteristics in epitaxially grown BGaN. J Mater Sci 57, 7265–7275 (2022). https://doi.org/10.1007/s10853-022-07085-z

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