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Cd(II)-based metal–organic framework-derived CdS photocatalysts for enhancement of photocatalytic activity

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Abstract

CdS with band gaps of 2.4 eV is an essential semiconductor for optoelectronic and photocatalytic devices. In this study, Cd(II)-based metal–organic framework (MOF)-derived CdS photocatalysts are successfully synthesized using a facile chemical bath deposition method. CdS precursors are derived from Cd-based MOFs that H2S gas was bubbled into as S source. Four kinds of CdS nano-photocatalyst are obtained through controlling the thermal annealing process of CdS precursors. The excellent photocatalytic performance of CdS and the benefits of the porous and molecular sieving properties of MOFs are well integrated. The evolution of the morphology, microstructure, and optical properties are investigated by various characterization methods. The results indicate that the sample with an annealing temperature of 500 °C is primarily nanosheet structures with sizes ranging from 20 to 30 nm, which construct a porous network structure, Moreover, the best photodegradation activity is obtained by illuminating the catalyst in rhodamine-B dye solution for 80 min and reducing the absorption intensity to nearly zero. Finally, the pollutant degradation mechanism was analyzed in detail.

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Scheme 1
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taken from the a CdS precursor, b CdS-1, c CdS-2, d CdS-3, and e CdS-4

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Scheme 2
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Acknowledgements

This work is jointly supported by the National Natural Science Foundation of China (11874200, 11804125), the Qing Lan Project of Jiangsu Province, the Funded by China Postdoctoral Science Foundation (No. 2020M671425), Jiangsu Postdoctoral Science Foundation (No. 2020Z161), the Natural Science Foundation of Nanjing Xiaozhuang University (2020NXY11), and the open project in the National Laboratory of Solid State Microstructures (No. M32042).

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Correspondence to Xiaoshan Wu.

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Ma, L., Ai, X., Yang, X. et al. Cd(II)-based metal–organic framework-derived CdS photocatalysts for enhancement of photocatalytic activity. J Mater Sci 56, 8643–8657 (2021). https://doi.org/10.1007/s10853-021-05855-9

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