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Temperature-dependent Raman investigation and photoluminescence of graphene quantum dots with and without nitrogen-doping

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Abstract

The study of the temperature dependence of Raman spectrum of graphene quantum dots is important for further understanding of the fine structure and properties of the material such as atomic bonds, thermal expansion, and thermal conductivity. In this work, we present new results on the temperature dependence of the frequency of G peak in the Raman spectra of bare GQDs and nitrogen-doped graphene quantum dots (N-GQDs), respectively. The nature of these GQDs is investigated using high-resolution transmission electron microscopy together with Raman, absorption, and photoluminescence spectra. We monitored a shift in G peak frequency toward lower frequencies with the temperature ranging from 81 to 663 K. In addition, a slight decrease in G peak intensity and an increase in D peak intensity have been observed, which is especially clear for Raman spectra of N-GQD sample. From the linear relationship of G peak frequency with temperature, we determine for the first time the value of the temperature coefficient χ of the G mode. Values of − 0.0222 ± 0.001 cm−1 K−1 for GQDs, and − 0.0243 ± 0.0013 cm−1 K−1 for N-GQDs were deduced. These results show a clear heat expansion in the graphene lattice, although small in size, when sample temperature is increased from 81 to 663 K. Our result is important to further understand physical effects induced by anharmonic phonons in QGDs and should be taken to account when designing efficient nanoelectronic devices employing GQDs.

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Acknowledgements

This research is funded by Vietnam National Foundation for Science and Technology Development (NAFOSTED) under Grant Number 103.03-2018.03. The author J.L. thanks the support by the French Region Auvergne Rhône-Alpes, project SCUSI n 1700936601. Pascal Philippe Bargiela from Institut de Recherches sur la Catalyse et l’Environnement de Lyon (IRCELYON, UMR5236) is thanked for XPS analysis. Finally, the authors thank Duy Tan University and the National Key Laboratory for Electronic Materials and Devices of Institute of Materials Science for the use of facilities.

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Authors and Affiliations

  1. Institute of Materials Science, Vietnam Academy of Science and Technology (VAST), 18 Hoang Quoc Viet Road, Cau Giay Dist, Hanoi, Vietnam

    Pham Nam Thang, Dao Nguyen Thuan, Nguyen Hai Yen & Pham Thu Nga

  2. Institute of Research and Development, Duy Tan University, Da Nang, 550000, Vietnam

    Le Xuan Hung

  3. Faculty of Natural Sciences, Duy Tan University, Da Nang, 550000, Vietnam

    Le Xuan Hung & Pham Thu Nga

  4. Institute of Theoretical and Applied Research, Duy Tan University, Hanoi, 100000, Vietnam

    Nguyen Thi Thuc Hien & Pham Thu Nga

  5. Thai Nguyen University of Education, Thai Nguyen, Vietnam

    Vu Thi Hong Hanh

  6. Center for Nanoscience and Technology, Hanoi National University of Education, 136 Xuan Thuy, Hanoi, Vietnam

    Nguyen Cao Khang

  7. Institut Lumière Matière, UMR5306, Université Lyon 1, 69622, Villeurbanne, France

    Julien Laverdant

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  1. Pham Nam Thang
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Thang, P.N., Hung, L.X., Thuan, D.N. et al. Temperature-dependent Raman investigation and photoluminescence of graphene quantum dots with and without nitrogen-doping. J Mater Sci 56, 4979–4990 (2021). https://doi.org/10.1007/s10853-020-05578-3

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