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Aliovalent MnTi and GaTi substitution in high-temperature piezoelectric (x)Bi(Zn0.5Zr0.5)O3—(y)BiScO3—(100 – x − y)PbTiO3

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Abstract

Aliovalent substitution of 1–2 % Mn and Ga for Ti has been carried out in the high-temperature ternary system (x)Bi(Zn0.5Zr0.5)O3—y)BiScO3—(100−x−y)PbTiO3 near the morphotropic phase boundary, specifically 2.5BZZ-37.5BS-60PT in an attempt to reduce the loss tangent. Modifications of this particular composition were chosen due its high-Curie temperature of 420 °C and excellent piezoelectric coefficient of 520 pm/V. Dielectric, piezoelectric, and electromechanical properties were characterized as a function of temperature, frequency, and electric field for all compositions. Small concentrations of Mn and Ga were shown to increase both the electrical and mechanical quality factors, with a Q m and Q e of 300 and 150, respectively, from room temperature up to 300 °C for Mn-doped compositions.

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Acknowledgements

The author would like to thank Tom Sabo and Jon Mackey at Case Western Reserve University for the help provided during the research for this work.

Funding

Funding for this work was made by possible by NASA GSRP Fellowship NNX11AL17H with additional funding provided by AFOSR FA9550-0601-1-0260.

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Authors and Affiliations

  1. Case Western Reserve University, Cleveland, OH, 44106, USA

    B. Kowalski & A. Sehirlioglu

  2. NASA Glenn Research Center, Cleveland, OH, 44135, USA

    A. Sayir

Authors
  1. B. Kowalski
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  2. A. Sayir
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  3. A. Sehirlioglu
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Correspondence to B. Kowalski.

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Kowalski, B., Sayir, A. & Sehirlioglu, A. Aliovalent MnTi and GaTi substitution in high-temperature piezoelectric (x)Bi(Zn0.5Zr0.5)O3—(y)BiScO3—(100 – x − y)PbTiO3 . J Mater Sci 51, 6761–6769 (2016). https://doi.org/10.1007/s10853-016-9963-y

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  • DOI: https://doi.org/10.1007/s10853-016-9963-y

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