Abstract
The saturation of complementary metal–oxide–semiconductor (CMOS) technology in terms of area and power efficiency has given rise to advanced research on nanodevices. Memristors and their switching properties facilitate the implementation of various combinational logics and neural networks by potential replacement of the existing CMOS technology for edge computing devices. This work presents the design, implementation, and performance evaluation of memristor-based combinational logic circuits including adders, subtractors, and decoders via MATLAB Simulink and Cadence Virtuoso. In this work, we propose an optimized design of memristor-based combinational logic circuits and conduct a comparative study with the conventional method. The proposed memristor model is thoroughly validated experimentally for a high-density Y2O3-based memristive crossbar array and shows ultralow values in device-to-device and cycle-to-cycle variability. The power calculated from these circuits is reduced by more than 90% as compared to conventional CMOS technology implemented in Cadence Virtuoso. Moreover, the number of components utilized in the memristor-based logic circuits is significantly reduced in comparison to existing CMOS technology, which makes it more area-efficient and opens new avenues for the design and implementation of complex logic circuitry in few-micrometer scale.
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Neumann, J.V.: First draft of a report on the EDVAC. IEEE Ann. Hist. Comput. 15(4), 27–75 (1993). https://doi.org/10.1109/85.238389
Zidan, M.A., Strachan, J.P., Lu, W.D.: The future of electronics based on memristive systems. Nat. Electron. 1(1), 22–29 (2018). https://doi.org/10.1038/s41928-017-0006-8
Jouppi, N.P. et al.: In-data centre performance analysis of a tensor processing unit. In: Proceedings of the 44th Annul International Symposium on Computer Architecture (ISCA), pp. 1–12 (2017)
Nikonov, D.E., Young, I.A.: Overview of beyond-CMOS devices and a uniform methodology for their benchmarking. Proc. IEEE 101(12), 2498–2533 (2013). https://doi.org/10.1109/JPROC.2013.2252317
Nabulsi, M., Al-Husainy, M.: Using combinational circuits for control purposes. J. Comput. Sci. 5, 507 (2009). https://doi.org/10.3844/jcssp.2009.507.510
Chua, L.O.: Memristor-the missing circuit element. IEEE Trans. Circuit Theory 18(5), 507–519 (1971). https://doi.org/10.1109/TCT.1971.1083337
Strukov, D.B., Snider, G.S., Stewart, D.R., Williams, R.S.: The missing memristor found. Nature 453(7191), 80–83 (2008). https://doi.org/10.1038/nature06932
Stathopoulos, S., Khiat, A., Trapatseli, M., Cortese, S., Serb, A., Valov, I., Prodromakis, T.: Multibit memory operation of metal-oxide Bilayer memristors. Sci. Rep. 7(1), 17532 (2017). https://doi.org/10.1038/s41598-017-17785-1
Duan, S., Hu, X., Wang, L., Li, C.: Memristor-based RRAM with applications. Sci. China Inf. Sci. 55, 1446–1460 (2012). https://doi.org/10.1007/s11432-012-4572-0
Kvatinsky, S., Satat, G., Wald, N., Friedman, E.G., Kolodny, A., Weiser, U.C.: Memristor-based material implication (IMPLY) logic: design principles and methodologies. IEEE Trans. Very Large-Scale Integr. (VLSI) Syst. 22(10), 2054–2066 (2014). https://doi.org/10.1109/TVLSI.2013.2282132
Khalid, M.: Review on various memristor models, characteristics, potential applications, and future works. Trans. Electr. Electron. Mater. 20, 289 (2019). https://doi.org/10.1007/s42341-019-00116-8
Kvatinsky, S., et al.: MAGIC-memristor-aided logic. IEEE Trans. Circuits Syst. II Express Briefs 61(11), 895–899 (2014). https://doi.org/10.1109/TCSII.2014.2357292
Liu, G., Shen, S., Jin, P., Wang, G., Liang, Y.: Design of memristor-based combinational logic circuits. Circuits Syst. Signal Process. 40, 1–22 (2021). https://doi.org/10.1007/s00034-021-01770-1
Mandal, S., Sinha, J., Chakraborty, A.: Design of memristor -CMOS based logic gates and logic circuits. In: 2nd International Conference on Innovations in Electronics, Signal Processing and Communication (IESC), Shillong, India, pp. 215–220 (2019). https://doi.org/10.1109/IESPC.2019.8902355.
Gao, C., Li, T., Wang, T., Cao, X.: Memristor-based logic gate circuit. In: 2020 IEEE 3rd International Conference on Computer and Communication Engineering Technology (CCET), Beijing, China, pp. 330–333 (2020). https://doi.org/10.1109/CCET50901.2020.9213140.
Singh, T.: Hybrid Memristor-CMOS (MeMOS) based logic gates and adder circuits. arXiv [cs.ET], 1506, pp. 1–11 (2015)
Kumar, S., Agrawal, R., Das, M., Jyoti, K., Kumar, P., Mukherjee, S.: Analytical model for memristive systems for neuromorphic computation. J. Phys. D Appl. Phys. (2021). https://doi.org/10.1088/1361-6463/ac07dd
Kumar, S., Agarwal, A., Mukherjee, S.: Electrical performance of large-area Y2O3 memristive crossbar array with ultralow C2C variability. IEEE Trans. Electron Devices 69(7), 3660–3666 (2022). https://doi.org/10.1109/TED.2022.3172400
Kumar, A., Das, M., Garg, V., Sengar, B.S., Htay, M.T., Kumar, S., Kranti, A., Mukherjee, S.: “Forming-free high-endurance Al/ZnO/Al memristor fabricated by dual ion beam sputtering. Appl. Phys. Lett. 110(253509), 1–5 (2017). https://doi.org/10.1063/1.4989802
Kumar, S., Agrawal, R., Das, M., Kumar, P., Mukherjee, S.: Analytical modeling of Y2O3-based memristive system for synaptic applications. J. Phys. D Appl. Phys. 53, 305101 (2020). https://doi.org/10.1088/1361-6463/ab810e
Kumar, S., Kumbhar, D.D., Park, J.H., Kamat, R.K., Dongale, T.D., Mukherjee, S.: Y2O3-based crossbar array for analog and neuromorphic computation. IEEE Trans. Electron Devices 70(2), 473–477 (2023). https://doi.org/10.1109/TED.2022.3227890
Yi, S., Kendall, J.D., Williams, R.S.: Activity-difference training of deep neural networks using memristor crossbars. Nat. Electron. 6, 45–51 (2023). https://doi.org/10.1038/s41928-022-00869-w
Vourkas, I., Sirakoulis, G.C.: Emerging memristor-based logic circuit design approaches: a review. IEEE Circuits Syst. Mag. 16(3), 15–30 (2016). https://doi.org/10.1109/MCAS.2016.2583673
Yang, J., Pickett, M., Li, X., Ohlberg, D.A.A., Stewart, D.R., Williams, R.S.: Memristive switching mechanism for metal/oxide/metal nanodevices. Nat. Nanotechnol. 3, 429–433 (2008). https://doi.org/10.1038/nnano.2008.160
Yakopcic, C., Taha, T.M., Subramanyam, G., Pino, R.E., Rogers, S.: A memristor device model. IEEE Electron Device Lett. 32, 1436–1438 (2011). https://doi.org/10.1109/LED.2011.2163292
Dong, Z., Qi, D., He, Y., Xu, Z., Hu, X., Duan, S.: Easily cascaded memristor-CMOS hybrid circuit for high-efficiency Boolean logic implementation. IET Circuit Devices & Syst. 11(2), 123–134 (2017). https://doi.org/10.1142/S0218127418501493
Kang, S.M., Leblebici, Y.: Cmos digital integrated circuits: analysis and design”, McGraw Hill, ISBN: 978–0–07–246053–7, (1995)
Kumar, G., Datta, K.: Design of digital functional blocks using hybrid memristor structures. In: TENCON 2015–2015 IEEE Region 10 Conference, pp. 1–5 (2015). https://doi.org/10.1109/TENCON.2015.7372883.
Nawaria, M., Kumar, S., Gautam, M.K., Dhakad, N.S., Singh, R., Singhal, S., Kumar, P., Vishvakarma, S.K., Mukherjee, S.: Memristor-inspired digital logic circuits and comparison with 90-/180-nm CMOS technologies. IEEE Trans. Electron Devices (2023). https://doi.org/10.1109/TED.2023.3278625
Acknowledgements
Shruti Sandip Ghodke would like to thank Narendra Singh Dhakad for providing assistant on the Cadence Virtuoso platform to evaluate the 180-nm CMOS technology outcomes. This work is partially supported by CSIR (No. 22(0841)/20/EMR-II) and JSPS Invitational Fellowship award (ID: S23062).
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Ghodke, S.S., Kumar, S., Yadav, S. et al. Combinational logic circuits based on a power- and area-efficient memristor with low variability. J Comput Electron 23, 131–141 (2024). https://doi.org/10.1007/s10825-023-02117-6
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DOI: https://doi.org/10.1007/s10825-023-02117-6