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An improved perovskite solar cell employing InxGa1-xAs as an efficient hole transport layer

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Abstract

The Spiro-OMeTAD is an excellent candidate for application as hole transport material (HTM), but its high hygroscopicity, inclination to crystallize, and fragility to moisture and heat make it unsuitable for solar cells. Thus, it is of interest to investigate other HTM candidates. In this paper, the use of p-type InGaAs as hole transport material (HTM) has been suggested to enhance the performance of perovskite-based solar cells (PSC). The simulation of a hybrid CH3NH3PbI3/InGaAs planar heterojunction perovskite solar cell is performed using the Silvaco ATLAS simulator. In order to confirm the predictability of the proposed simulation methodology, the conventional ITO/TiO2/MAPbI3/Spiro-OMeTAD structure is simulated, and shows good coherence with experimental results. The proposed design using InGaAs as HTM outperforms the conventional device in terms of short-circuit current density (JSC) of 37.2 mA/cm2, open-circuit voltage (VOC) of 1 V, fill factor (FF) of 80% and high value of efficiency. In addition, the findings show that with In content of x = 0.7 the efficiency will improve to reach a value of about 30%.

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Authors and Affiliations

  1. Faculty of Technology, University Hassiba Benbouali, Chlef, Algeria

    M. Khaouani

  2. Higher National School of Renewable Energy, Environment & Sustainable Development, UHNS-RE2SD, Batna, Algeria

    H. Bencherif

  3. Center of Development of Satellite, Algerian Space Agency, Oran, Algeria

    Z. Kourdi

  4. Unit Research of Materials and Renewable Energies URMER, Tlemcen, Algeria

    M. Khaouani

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  1. M. Khaouani
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Correspondence to M. Khaouani.

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Khaouani, M., Bencherif, H. & Kourdi, Z. An improved perovskite solar cell employing InxGa1-xAs as an efficient hole transport layer. J Comput Electron 22, 394–400 (2023). https://doi.org/10.1007/s10825-022-01953-2

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