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Random telegraph noise in gate-all-around silicon nanowire MOSFETs induced by a single charge trap or random interface traps

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Abstract

The random telegraph noise (RTN) in gate-all-around (GAA) silicon (Si) nanowire (NW) metal–oxide–semiconductor field-effect transistors (MOSFETs) induced by a single charge trap (SCT) or random interface traps (RITs) is studied for the first time. An experimentally validated three-dimensional quantum-mechanically-corrected device simulation is advanced to investigate the explored devices. The magnitude of the RTN decreases with increasing gate voltage to different extents for the planar MOSFET, bulk FinFET, and GAA Si NW MOSFET devices, owing to the reduction in the conducting carriers along the channel. For the GAA Si NW MOSFET, the reduction of the fluctuation of threshold voltage in the presence of RITs is about 25 and 3 times when compared with the planar MOSFET and bulk FinFET device, respectively, whereas this reduction in the presence of an SCT is about 6 and 2.6 times, respectively. For the GAA Si NW MOSFET, the reduction of the RTN in the presence of RITs is about 7.5 and 4.7 times when compared with the planar MOSFET and bulk FinFET device, respectively, whereas this reduction in the presence of an SCT is about 22 and 6 times, respectively. At given threshold voltage, compared with the results for the planar MOSFETs and bulk FinFET, the GAA Si NW MOSFET exhibits minimal characteristic variability and RTN owing to the ultimate electrostatic control of the gate from the point of view of electrostatic integrity.

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Acknowledgments

This work was supported in part by the Ministry of Science and Technology, Taiwan, under grant no. 108–2221-E-009–008.

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Authors and Affiliations

  1. Parallel and Scientific Computing Laboratory, National Chiao Tung University, Hsinchu, 300, Taiwan

    Sekhar Reddy Kola, Yiming Li & Narasimhulu Thoti

  2. EECS International Graduate Program, National Chiao Tung University, Hsinchu, 300, Taiwan

    Sekhar Reddy Kola, Yiming Li & Narasimhulu Thoti

  3. Department of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan

    Yiming Li

  4. Center for mmWave Smart Radar System and Technologies, National Chiao Tung University, Hsinchu, 300, Taiwan

    Yiming Li

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  1. Sekhar Reddy Kola
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Correspondence to Yiming Li.

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Kola, S.R., Li, Y. & Thoti, N. Random telegraph noise in gate-all-around silicon nanowire MOSFETs induced by a single charge trap or random interface traps. J Comput Electron 19, 253–262 (2020). https://doi.org/10.1007/s10825-019-01438-9

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