Abstract
A novel SOI LDMOS with p+ buried islands and p-top layer in the drift region (PBI SOI) is proposed in this letter. At off-state, the high potential is induced from the drain region to the inside of the drift region. The p+ buried islands cause reduced surface field effect and modulate the electric field distribution in the drift region. The buried p-top layer withstands the lateral drain voltage. Thus, the breakdown voltage (BV) of PBI SOI is significantly improved. Meanwhile, the specific on-resistance \((R_\mathrm{on,sp})\) is reduced by improving doping concentration of the drift region, owing to the assisting depletion effect caused by the p+ buried islands. Consequently, the \(R_\mathrm{on,sp}\) of the proposed structure is reduced by 53.7% compared with the conventional SOI LDMOS at the same half-pitch size, the BV and the figure-of-merit \((\hbox {FOM} = \hbox {BV}^{2}/ R_\mathrm{on,sp})\) are observably improved by 24.8% and 235.9% respectively.
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Acknowledgements
This work is supported by the National Natural Science Foundation of China (Grant No. 61574023), the Open Funds of State Key Laboratory of Vehicle NVH and Safety Technology (Grant Nos. NVHSKL-201414 and 201608), and Innovative support program for returned overseas students in Chongqing (Grant No. cx2017009) and Chongqing Key R&D Project (Grant No. cstc2017zdcy-zdyfx0090).
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Lei, J., Hu, S., Yang, D. et al. Investigation of a novel SOI LDMOS using p+ buried islands in the drift region by numerical simulations. J Comput Electron 17, 646–652 (2018). https://doi.org/10.1007/s10825-018-1168-y
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DOI: https://doi.org/10.1007/s10825-018-1168-y