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Application of generalized logistic functions in surface-potential-based MOSFET modeling

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Abstract

An improved surface-potential-based metal–oxide–semiconductor field-effect transistor (MOSFET) model is presented. The improvement consists in introducing a new generalized logistic functional form for the smoothing factor that allows for a continuous transition of the surface potential from the depletion to strong inversion region. This functional form takes into account specific changes in the technological characteristics of MOSFET devices. The model combines the advantages of both regional and single-piece models and satisfies all requirements for compact models, i.e., continuity, accuracy, scalability, and simulation performance. Comparison with numerical data shows that the model provides an accurate description of the surface potential for a wide range of substrate doping and oxide thickness.

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Authors and Affiliations

  1. Faculty of Science and Mathematics, Lole Ribara 29, 40000, Kosovska Mitrovica, Serbia

    Tijana Kevkić & Vladica Stojanović

  2. Academy of Criminalistics and Police Studies, Cara Dušana 196, 11000, Belgrade, Serbia

    Dušan Joksimović

Authors
  1. Tijana Kevkić
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  2. Vladica Stojanović
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  3. Dušan Joksimović
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Correspondence to Vladica Stojanović.

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Kevkić, T., Stojanović, V. & Joksimović, D. Application of generalized logistic functions in surface-potential-based MOSFET modeling. J Comput Electron 16, 90–97 (2017). https://doi.org/10.1007/s10825-016-0935-x

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  • DOI: https://doi.org/10.1007/s10825-016-0935-x

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