Photoresist (PR) NFR 016D4 films deposited on the surface of silicon (Si) wafers by centrifugation were studied by attenuated total internal reflection Fourier-IR spectroscopy. Background absorption of the PR/Si structures was observed to increase at wave numbers <1600 cm−1 because of the effect of electromagnetic radiation on the Si substrate and scattering/reflection at the PR/Si interface. Asymmetry in the force field of the aromatic ring in the NFR 016D4 film was detected. Spectral features of thick PR NFR 016D4 films were due to the presence of residual solvent. Formaldehyde formed by fragmentation of hydroxymethyl residues in the phenol-formaldehyde resin was detected in irradiated films. Radiation-induced processes in PR NFR 016D4 films at doses up to 2∙1015 cm−2 involved mainly residual solvent molecules or by-products of PR film synthesis.
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K. M. Cheung, D. M. Stemer, C. Zhao, T. D. Young, J. N. Belling, A. M. Andrews, and P. S. Weiss, ACS Mater. Lett., 2, No. 1, 76–83 (2020).
W. M. Moreau, Semiconductor Lithography. Principles, Practices and Materials, Plenum Press, New York, London (1988).
D. I. Brinkevich, A. A. Kharchenko, V. S. Prosolovich, V. B. Odzhaev, S. D. Brinkevich, and Yu. N. Yankovski, Russ. Microelectron., 48, No. 3, 197–201 (2019).
S. D. Brinkevich, E. V. Grinyuk, D. I. Brinkevich, and V. S. Prosolovich, High Energy Chem., 54, No. 5, 342–351 (2020).
I. Poljansek, U. Sebenik, and M. Krajnc, J. Appl. Polym. Sci., 99, 2016–2028 (2006).
V. B. Odzhaev, A. N. Pyatlitski, V. S. Prosolovich, N. S. Kovalchuk, Ya. A. Soloviev, D. V. Zhygulin, D. V. Shestovsky, Yu. N. Yankovski, and D. I. Brinkevich, J. Appl. Spectrosc., 89, No. 4, 665–670 (2022).
E. Pretsch, P. Bullmann, and C. Affolter, Structure Determination of Organic Compounds. Tables of Spectral Data, Springer-Verlag, Berlin–Heidelberg (2000).
B. N. Tarasevich, IR Spectra of Principal Classes of Organic Compounds. Reference Materials [in Russian], MGU, Moscow (2012).
S. D. Brinkevich, D. I. Brinkevich, V. S. Prosolovich, and R. L. Sverdlov, High Energy Chem., 55, No. 1, 65–74 (2021).
A. A. Kharchenko, Yu. A. Fedotova, I. A. Zur, D. I. Brinkevich, S. D. Brinkevich, E. V. Grinyuk, V. S. Prosolovich, S. A. Movchan, G. E. Remnev, S. A. Linnik, and S. B. Lastovskii, High Energy Chem., 56, No. 5, 354–362 (2022).
S. D. Brinkevich, D. I. Brinkevich, and V. S. Prosolovich, Russ. Microelectron., 50, No. 1, 33–38 (2021).
D. Roy, P. K. Basu, P. Raghunathan, and S. V. Eswaran, Magn. Res. Chem., 41, 84–90 (2003).
S. D. Brinkevich, E. V. Grinyuk, R. L. Sverdlov, D. I. Brinkevich, V. S. Prosolovich, and A. N. Pyatlitski, J. Appl. Spectrosc., 87, No. 4, 647–651 (2020).
S. D. Brinkevich, D. I. Brinkevich, V. S. Prosolovich, S. B. Lastovskii, and A. N. Pyatlitski, J. Appl. Spectrosc., 87, No. 6, 1072–1078 (2021).
G. B. Tolstorozhev, I. V. Skornyakov, M. V. Belkov, O. I. Shadyro, S. D. Brinkevich, and S. N. Samovich, J. Appl. Spectrosc., 79, No. 4, 645–650 (2011).
A. N. Oleshkevich, N. M. Lapchuk, V. B. Odzhaev, I. A. Karpovich, V. S. Prosolovich, D. I. Brinkevich, and S. D. Brinkevich, Russ. Microelectron., 49, No. 1, 55–61 (2020).
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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 90, No. 6, pp. 863–869, November-December, 2023.
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Brinkevich, D.I., Grinyuk, E.V., Brinkevich, S.D. et al. Fourier-IR Spectroscopy of Photoresist/Silicon Structures for Explosive Lithography. J Appl Spectrosc 90, 1223–1228 (2024). https://doi.org/10.1007/s10812-024-01657-4
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DOI: https://doi.org/10.1007/s10812-024-01657-4