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Raman Spectra of Silicon/Germanium Alloy Thin Films Based on Porous Silicon

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Journal of Applied Spectroscopy Aims and scope

Regularities of composition changes of silicon/germanium alloy thin films formed on a single-crystalline silicon substrate by electrochemical deposition of germanium into a porous silicon matrix with subsequent rapid thermal annealing (RTA) at temperatures of 750–950°C are studied. An analysis of the samples by Raman spectroscopy showed that an increase of the RTA temperature leads to a decrease in the germanium concentration in the formed film. A decrease of the RTA duration at a given temperature makes it possible to obtain films with a higher germanium concentration and to control the composition of thin silicon/germanium alloy films formed by changing the RTA temperature and duration. The obtained results on controlling the composition of silicon/germanium alloy films can be used to create functional electronic devices, thermoelectric power converters, and optoelectronic devices.

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Authors and Affiliations

  1. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus

    E. B. Chubenko, N. L. Grevtsov & V. P. Bondarenko

  2. National Research University of Electronic Technology — MIET, Moscow, Zelenograd, Russia

    I. M. Gavrilin, A. V. Pavlikov, A. A. Dronov & S. A. Gavrilov

  3. Institute of Nanotechnology of Microelectronics, Russian Academy of Sciences, Moscow, Russia

    L. S. Volkova

Authors
  1. E. B. Chubenko
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  2. N. L. Grevtsov
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  3. V. P. Bondarenko
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  4. I. M. Gavrilin
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  5. A. V. Pavlikov
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  6. A. A. Dronov
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  7. L. S. Volkova
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  8. S. A. Gavrilov
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Corresponding author

Correspondence to E. B. Chubenko.

Additional information

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 89, No. 5, pp. 614–620, September–October, 2022. https://doi.org/10.47612/0514-7506-2022-89-5-614-620.

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Chubenko, E.B., Grevtsov, N.L., Bondarenko, V.P. et al. Raman Spectra of Silicon/Germanium Alloy Thin Films Based on Porous Silicon. J Appl Spectrosc 89, 829–834 (2022). https://doi.org/10.1007/s10812-022-01432-3

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  • DOI: https://doi.org/10.1007/s10812-022-01432-3

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