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Study of the Optical Properties of Barium Selenide Crystals. II. Elementary Transition Bands and Their Fundamental Parameters

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Journal of Applied Spectroscopy Aims and scope

The spectral dependences of the imaginary parts of the dielectric permittivity ε2(E), bulk (–Im ε–1) and surface (–Im (1 + ε)–1) characteristic electron energy losses for a barium selenide crystal are decomposed into 34 elementary bands in the 3–5.5 eV region at 2 K and in the 5.5–26 eV region at 77 K by an improved combined Argand diagram method. For each band in the three types of spectra, we determined the energy maxima Ei, the half-widths Hi, the amplitudes Ii, the areas Si, and the oscillator strengths fi. The parameter fi is calculated using a modification of the familiar formula for the effective number of valence electrons neff (E). We have established the main features of the 34 elementary bands of barium selenide in the 3–26 eV region, due to excitons and transverse and longitudinal interband transitions.

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References

  1. V. V. Sobolev and V. V. Nemoshkalenko, Computational Physics Methods in Solid State Theory. Electronic Structure of Semiconductors [in Russian], Naukova Dumka, Kiev (1988).

  2. V. V. Sobolev, Optical Properties and Electronic Structure of Nonmetals. I. Introduction to the Theory [in Russian], Inst. Komp. Issled., Moscow/Izhevsk (2012).

  3. V. V. Sobolev, Properties and Electronic Structure of Nonmetals. II. Simulation of Integral Spectra by Elementary Bands [in Russian], Inst. Komp. Issled., Moscow/Izhevsk (2012).

  4. T. S. Moss, Optical Properties of Semiconductors, Butterworths, London (1959).

    Google Scholar 

  5. V. V. Sobolev, Intrinsic Energy Levels of Group A 4 Solids [in Russian], Shtiintsa, Kishinev (1978).

    Google Scholar 

  6. S. Singh, A. Vij, S. P. Lochab, R. Kumar, and N. Singh, Mater. Res. Bull., 45, No. 5, 523–527 (2010).

    Article  Google Scholar 

  7. H. J. Freund, Surf. Sci., 601, No. 1, 1438–1445 (2007).

    Article  ADS  MathSciNet  Google Scholar 

  8. J. S. Elfimov, S. Yunoki, and G. A. Sawatzky, Phys. Rev. Lett., 89, No. 21, 216403(4) (2002).

    Article  ADS  Google Scholar 

  9. J. Osorio-Guillen, S. Lany, S. V. Barabash, and A. Zunger, Phys. Rev. Lett., 96, No. 10, 107203(4) (2006).

    Article  ADS  Google Scholar 

  10. M. Dadsetani and A. Pourghazi, Opt. Commun., 266, No. 2, 562–574 (2006).

    Article  ADS  Google Scholar 

  11. M. Dadsetani and A. Pourghazi, Physica B, 370, 35–45 (2005).

    Article  ADS  Google Scholar 

  12. H. Nejatipour and M. Dadsetani, Phys. Scr., 90, No. 8, 085802 (16) (2015).

  13. Y. Kaneko and T. Koda, J. Crystal. Growth, 86, No. 1, 72–78 (1988).

    Article  ADS  Google Scholar 

  14. Y. Kaneko, K. Morimoto, and T. Koda, J. Phys. Soc. Jpn., 52, No. 12, 4385–4396 (1983).

    Article  ADS  Google Scholar 

  15. V. Val. Sobolev and V. V. Sobolev, Semiconduct. Semimet., 79, 201–228 (2004).

  16. A. I. Kalugin and V. V. Sobolev, Phys. Rev. B, 71, No. 11, 115112(7) (2005).

    Article  ADS  Google Scholar 

  17. S. V. Shushkov, V. V. Sobolev, and V. Val. Sobolev, in: Proc. Eighth Int. Conf. on Amorphous and Microcrystalline Semiconductors [in Russian], Izdat. Politekh. Univ., St. Petersburg (2012), pp. 364–366.

  18. D. A. Merzlyakov, V. V. Sobolev, and V. Val. Sobolev, in: Proc. Ninth Int. Conf. on Amorphous and Microcrystalline Semiconductors [in Russian], Izdat. Politekh. Univ., St. Petersburg (2014), pp. 372–374.

  19. V. V. Sobolev, D. A. Perevoshchikov, D. A. Merzlyakov, V. Val. Sobolev, D. V. Anisimov, and E. A. Antonov, in: Proc. Tenth Int. Confrence on Amorphous and Microcrystalline Semiconductors [in Russian], Izdat. Politekh. Univ., St. Petersburg (2016), pp. 119–120.

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Correspondence to V. V. Sobolev.

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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 84, No. 2, pp. 233–239, March–April, 2017.

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Sobolev, V.V., Merzlyakov, D.A. & Sobolev, V.V. Study of the Optical Properties of Barium Selenide Crystals. II. Elementary Transition Bands and Their Fundamental Parameters. J Appl Spectrosc 84, 255–260 (2017). https://doi.org/10.1007/s10812-017-0460-0

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  • DOI: https://doi.org/10.1007/s10812-017-0460-0

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