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Spectroscopy for the Analysis of Nanoporous Silicon Gas and Humidity Sensors

  • TEMPMEKO 2016
  • Published:
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Abstract

In this work, a Raman spectroscopic study of nanoporous silicon sensor samples demonstrated its use as a method of gauging the sensor potential via quantitative data it provides on the sensor nanostructure dimensions. This special property of the Raman spectroscopy technique also showed its potential to determine mechanical stability of the samples over 3 months. This work also shows that the Raman spectroscopy technique is sensitive to step changes in relative humidity in all the sensor samples via its measurement of the strain-free crystalline silicon (c-Si) Raman peak. Since the Raman technique is non-destructive and senses remotely on the fragile nanoporous sensor samples it will be the ideal replacement of the presently used electrical capacitance techniques as the primary determination of relative humidity.

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Acknowledgments

We thank Sevcan Ayaksız, Şaban Kalay and Ertuğ Avcı for Raman spectra measurements at Yeditepe University, Istanbul, Turkey.

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Authors and Affiliations

  1. TUBITAK UME, TUBITAK Gebze Yerleskesi, Dr. Zeki Acar Cad, No. 1 Gebze, 41470, Kocaeli, Turkey

    S. Oguz Aytekin

  2. Physics Department, Yeditepe University, Istanbul, Turkey

    R. Ince

Authors
  1. S. Oguz Aytekin
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  2. R. Ince
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Correspondence to S. Oguz Aytekin.

Additional information

Selected Papers of the 13th International Symposium on Temperature, Humidity, Moisture and Thermal Measurements in Industry and Science.

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Oguz Aytekin, S., Ince, R. Spectroscopy for the Analysis of Nanoporous Silicon Gas and Humidity Sensors. Int J Thermophys 39, 114 (2018). https://doi.org/10.1007/s10765-018-2435-7

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