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Surface-Temperature Measurement and Submicron Defect Isolation for Microelectronic Devices Using Thermoreflectance Microscopy

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Abstract

Thermal analysis of small defects becomes essential for understanding the influence of hotspots, which affect the device performance, such as the operating speed and reliability. In this paper, we demonstrate a CCD-based thermoreflectance microscopy (TRM) system as a noncontact thermal analysis technique especially for submicron defects on microelectronic devices. By employing a lock-in detection technique and temperature calibration process, the surface temperature distribution of a polysilicon microresistor and submicron defects that are not distinguishable in conventional optical microscope images can be quantitatively measured with high thermal (up to \(\sim \)13 mK) and spatial (\(\sim \)670 nm) resolution. In addition, the accuracy of quantitative temperature measurement and small defect isolation by the TRM system is compared with that obtained from an infrared thermography (IRT) system.

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Acknowledgments

This work was supported by the Korea Basic Science Institute Grant D34500.

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Authors and Affiliations

  1. Center for Analytical Instrumentation Development, Korea Basic Science Institute, 169-148 Gwahangno, Yusung-gu, Daejeon, 305-806, Republic of Korea

    Seon Young Ryu, Dong Uk Kim, Hae Young Choi, Geon Hee Kim & Ki Soo Chang

  2. Biomedical Engineering R&D Center, Asan Institute for Life Sciences, 88 Olympic-ro 43-gil, Songpa-Gu, Seoul, 138-736, Republic of Korea

    Jun Ki Kim

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  1. Seon Young Ryu
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  2. Dong Uk Kim
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  3. Jun Ki Kim
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  4. Hae Young Choi
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  5. Geon Hee Kim
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  6. Ki Soo Chang
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Corresponding author

Correspondence to Ki Soo Chang.

Additional information

Seon Young Ryu, Dong Uk Kim, and Jun Ki Kim contributed equally to this work.

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Ryu, S.Y., Kim, D.U., Kim, J.K. et al. Surface-Temperature Measurement and Submicron Defect Isolation for Microelectronic Devices Using Thermoreflectance Microscopy. Int J Thermophys 36, 1217–1225 (2015). https://doi.org/10.1007/s10765-014-1681-6

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  • DOI: https://doi.org/10.1007/s10765-014-1681-6

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