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Crack Formation Reduction on Diamond-Paste Abrasive Processing of Silicon-Carbide Semiconductor Wafers

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The results of diamond-abrasive processing of the backside of 4H- and 6H-polytype silicon-carbide semiconductor wafers are presented. The sizes of surface microcracks in ceramic plates after abrasive treatment by means of pastes with diamond micro-powder of various grain sizes were investigated, and the relationship between the length of a surface micro-crack and the material removal rate, depending on the technological regimes of diamond-abrasive processing, was determined. As a result, a new method of one-sided abrasive treatment of thin ceramic plates, which reduces cracking, is proposed.

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References

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Authors and Affiliations

  1. Bryansk State Technical University, Bryansk, Russia

    S. G. Bishutin & S. S. Alekhin

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  1. S. G. Bishutin
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  2. S. S. Alekhin
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Correspondence to S. G. Bishutin.

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Translated from Steklo i Keramika, No. 5, pp. 46 – 51, May, 2023.

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Bishutin, S.G., Alekhin, S.S. Crack Formation Reduction on Diamond-Paste Abrasive Processing of Silicon-Carbide Semiconductor Wafers. Glass Ceram 80, 201–204 (2023). https://doi.org/10.1007/s10717-023-00584-8

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  • DOI: https://doi.org/10.1007/s10717-023-00584-8

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