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The mechanism to reform dynamic performance of an elastic wave-front in a piezoelectric semiconductor by the wave-carrier interaction induced from static biasing fields

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Abstract

The propagation of an elastic wave (EW) in a piezoelectric semiconductor (PSC) subjected to static biasing fields is investigated. It is found that there exist two coupling waves between electric field and charge carriers. One is stimulated by the action of the polarized electric field in the EW-front on charge carriers (EFC), and the other is stimulated by the action of initial electric field in biasing fields on dynamic carriers (IEC). Obviously, the latter is a man-made and tunable wave-carrier interaction. A careful study shows that IEC can play a leading role in remaking dynamic performance of the wave-front and an inter-medium role in transferring energy from biasing fields to EW-fronts. Hence, a method is proposed to reform the EW performance by biasing-fields: reforming the dispersivity of EW-fronts by promoting competition between IEC and EFC and inverting the dissipation by the IEC to transfer energy from biasing fields to EW-fronts. The corresponding tuning laws on the phase-frequency characteristics of an EW show that the wave velocity can be regulated smaller than the pure EW velocity at a low-frequency and larger than the pure piezoelectric wave velocity at a high-frequency. As for regulating the amplitude-frequency characteristics of the EW by the IEC, analyses show that EWs can obtain amplification only for those with relatively high vibration frequencies (small wave lengths). The studies will provide guidance for theoretical analysis of waves propagating in PSCs and practical application and design of piezotronic devices.

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Authors and Affiliations

  1. Department of Mechanics, Hubei Key Laboratory of Engineering Structural Analysis and Safety Assessment, Huazhong University of Science and Technology, Wuhan, 430074, China

    Wanli Yang, Yizhan Yang & Yuantai Hu

  2. Department of Engineering Mechanics, Shijiazhuang Tiedao University, Shijiazhuang, 050043, China

    Jinxi Liu

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  1. Wanli Yang
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Correspondence to Yuantai Hu.

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Citation: YANG, W. L., LIU, J. X., YANG, Y. Z., and HU, Y. T. The mechanism to reform dynamic performance of an elastic wave-front in a piezoelectric semiconductor by the wave-carrier interaction induced from static biasing fields. Applied Mathematics and Mechanics (English Edition), 44(3), 381–396 (2023) https://doi.org/10.1007/s10483-023-2968-7

Project supported by the National Natural Science Foundation of China (Nos. 12232007, 12102141, U21A20430, and 11972164) and the Chinese Postdoctoral Science Foundation (No. 2022M711252)

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Yang, W., Liu, J., Yang, Y. et al. The mechanism to reform dynamic performance of an elastic wave-front in a piezoelectric semiconductor by the wave-carrier interaction induced from static biasing fields. Appl. Math. Mech.-Engl. Ed. 44, 381–396 (2023). https://doi.org/10.1007/s10483-023-2968-7

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  • DOI: https://doi.org/10.1007/s10483-023-2968-7

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