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Novel high-gain narrowband antenna based on ENZ SIW structure and shorting pin

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Abstract

This paper provides an idea for designing a high-gain narrow-band substrate integrated waveguide (SIW) antenna. The high gain is achieved due to the epsilon-near-zero (ENZ) technique, and narrow-band performance is achieved due to impedance matching provided by a pair of symmetric shorting pins. In this paper, SIW is used near its cut-off frequency to realize the ENZ characteristics. Further, two symmetric open stubs are incorporated to reject the out out-of-band frequency signal. To attain narrow-band performance, pair of symmetric shorting pins are employed in place of the conventional way, i.e., tapered line transition to couple the energy from microstrip to SIW. To validate the proposed concept, a high-gain narrow-band SIW antenna has been designed for a frequency band on a 0.79 mm thick RT- DUROID 5880 substrate. Within the 7.77–8.07 GHz band, the proposed antenna radiates with gain and radiation efficiency of 6.51 dBi and 96%, respectively. The measured and simulated results are found to be consistent. The overall size of the proposed antenna is 28 X 22 mm2.

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Authors and Affiliations

  1. Department of Electronics and Communication, NIST, Berhampur, Rourkela, Odisha, India

    Rajesh Kumar Dash

  2. Department of Electronics and Communication, JSS Academy of Technical Education, Noida, UP, India

    Sadhana Kumari

  3. Centre for Electromagnetics, CSIR-National Aerospace Laboratories Bengaluru, Bengaluru, Karnataka, India

    Balamati Choudhury

Authors
  1. Rajesh Kumar Dash
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  2. Sadhana Kumari
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  3. Balamati Choudhury
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Contributions

First author “RKD” has designed and analyzed the proposed structure, second author “SK” has done the measurement and plotted all figures and the third author “BC” has drafted the manuscript.

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Correspondence to Sadhana Kumari.

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Dash, R.K., Kumari, S. & Choudhury, B. Novel high-gain narrowband antenna based on ENZ SIW structure and shorting pin. Analog Integr Circ Sig Process (2024). https://doi.org/10.1007/s10470-024-02267-y

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  • DOI: https://doi.org/10.1007/s10470-024-02267-y

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