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A fully symbolic homotopy-based memristor model for applications to circuit simulation

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Abstract

Since the outcoming of the memristor, memristive systems and mem-elements in electronics, new features for analog and digital circuit design have been introduced, and as a result models for the memristor are strongly needed in order to incorporate the device to the design flow loop. In this paper, a model for the memristor is introduced, it is generated by solving the differential equation, that governs the physical functioning of the device, by using a homotopy formulation. The generated model is recast in fully symbolic form that can be used to carry out behavioral simulation of circuits containing memristors.

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Acknowledgments

Hector Vazquez-Leal gratefully acknowledges the financial support provided by the National Council for Science and Technology of Mexico (CONACyT) through Grant CB-2010-01 No. 157024. Gerardo Ulises Díaz Arango is currently a PhD student at INAOE with an academic scholarship under contract 387601.

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Authors and Affiliations

  1. Electronics Department, INAOE, Puebla, PUE, Mexico

    Arturo Sarmiento-Reyes, Luis Hernández-Martínez, Carlos Hernández-Mejía & Gerardo Ulises Diaz Arango

  2. Faculty of Electronic Instrumentation, Universidad Veracruzana, Xalapa, Veracruz, Mexico

    Héctor Vázquez-Leal

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  1. Arturo Sarmiento-Reyes
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  2. Luis Hernández-Martínez
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  3. Héctor Vázquez-Leal
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  4. Carlos Hernández-Mejía
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  5. Gerardo Ulises Diaz Arango
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Correspondence to Arturo Sarmiento-Reyes.

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Sarmiento-Reyes, A., Hernández-Martínez, L., Vázquez-Leal, H. et al. A fully symbolic homotopy-based memristor model for applications to circuit simulation. Analog Integr Circ Sig Process 85, 65–80 (2015). https://doi.org/10.1007/s10470-015-0579-y

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