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Electromechanical Fields and Their Influence on the Internal Quantum Efficiency of GaN-Based Light-Emitting Diodes

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A Correction to this article was published on 22 November 2018

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Abstract

The effect of electromechanical fields, i.e., polarization fields, on the efficiency droop of GaN-based light-emitting diodes is presented using both experimental and numerical analyses. The role of incorporating such polarization charge density in device performance is numerically investigated and further compared with the experimental results of internal quantum efficiency of three different devices in consideration.

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  • 22 November 2018

    In all the articles in Acta Mechanica Solida Sinica, Volume 31, Issues 1–4, the copyright is incorrectly displayed as “The Chinese Society of Theoretical and Applied Mechanics and Technology ” where it should be “The Chinese Society of Theoretical and Applied Mechanics”.

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Acknowledgements

The authors are thankful to Prof. Jong-In Shim and Prof. Dong-Soo Shin for the useful discussion. The authors appreciate Higher Education Commission of Pakistan and Hanyang University, South Korea, for providing the useful resources for this study. The authors also acknowledge the support of Crosslight\({\circledR }\) for their technical support.

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Authors and Affiliations

  1. Department of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Swabi, 23460, Pakistan

    Muhammad Usman & Kiran Saba

  2. Department of Mathematics, COMSATS Institute of Information Technology, Wah Cantt, 47040, Pakistan

    Adnan Jahangir & Nazeer Muhammad

  3. Department of Electrical Engineering, COMSATS Institute of Information Technology, Wah Cantt, 47040, Pakistan

    Muhammad Kamran

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  1. Muhammad Usman
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  2. Kiran Saba
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Correspondence to Nazeer Muhammad.

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Usman, M., Saba, K., Jahangir, A. et al. Electromechanical Fields and Their Influence on the Internal Quantum Efficiency of GaN-Based Light-Emitting Diodes. Acta Mech. Solida Sin. 31, 383–390 (2018). https://doi.org/10.1007/s10338-018-0013-y

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  • DOI: https://doi.org/10.1007/s10338-018-0013-y

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