Abstract
Uniform and well-aligned organic semiconductor single crystals (OSSCs) are critical for high-performance electronic and optoelectronic device applications due to their long-range order and low defect density. However, it is still challenging to fabricate uniform and well-aligned OSSCs by an efficient and facile method. Here, we report a vapor-induced coating method to prepare uniform organic semiconductor stripe single crystals with well-aligned orientation. The coating velocity and solution concentration are important to control the stripe crystals’ morphology, which influence the triple-phase contact line dewetting behavior and then change the mass transport of the meniscus. Insufficient solute supply causes the generation of dendritic crystals. Uniform stripe single crystals of high quality and pure orientation are prepared in the condition of a sufficient and suitable solute supply. Moreover, the electronic and optoelectronic properties are evaluated. Notably, the polarization-sensitive photodetectors based on the uniform stripe crystals exhibit high polarization sensitivity and its dichroic ratio of photocurrent is 1.98. This method is efficient for the preparation of various high-quality and uniform organic semiconductor stripe single crystals, opening an opportunity for high-performance organic functional devices.
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Acknowledgments
This work was financially supported by the National Key R&D Program of China (Nos. 2018YFA0703200 and 2018YFA0208501), the National Natural Science Foundation of China (Nos. 22175185, 52003276, 52203247, 91963212 and 22002171), Beijing National Laboratory for Molecular Sciences (No. BNLMS-CXXM-202005) and CAS-VPST Silk Road Science Fund 2022 (No. 121111KYSB20210006). We thank Jiling Yue, Kaiang Liu and Bo Guan for the cryo-TEM measurements.
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Shao, LJ., Chen, SN., Wang, YM. et al. Vapor-Induced Coating Method for Well-Aligned and Uniform Organic Semiconductor Single Crystals. Chin J Polym Sci 41, 1638–1645 (2023). https://doi.org/10.1007/s10118-023-2979-2
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DOI: https://doi.org/10.1007/s10118-023-2979-2