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Nitrogen doping in the surface layers of Ti3C2Tx/rGO film via nitrogen ion implantation for supercapacitor

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Abstract

Two-dimensional transition metal carbides (MXenes) are widely used in the field of electrochemical energy storage due to their unique properties, but the efficient use of multilayer MXenes (m-MXenes) to prepare flexible electrodes remains a challenge. Herein, large-size graphene oxide (GO) is used as a conductive adhesive to bridge the multilayer Ti3C2Tx (m-Ti3C2Tx) to form a Ti–O-C bond to form the flexible Ti3C2Tx/GO (MG) film which was subsequently implanted by nitrogen ions to dope nitrogen in its surface layers (N-Ti3C2Tx/GO, NMG). The NMG was annealed at 400 ℃ to obtain the N-Ti3C2Tx/reduced GO (N-Ti3C2Tx/rGO, NMRG) electrode for supercapacitor. Compared with the Ti3C2Tx/rGO (MRG), the specific capacitance of NMRG-1 (nitrogen ion implantation dose is 1 × 1017) reaches 115 F g−1 (248. 7 F cm−3) at 0.2A g−1, while it is 95 F g−1 (167.8 F cm−3) of MRG. The rate performance of NMRG-1 is increased from 31.5 (MRG) to 76.1%. In addition, NMRG-1 electrode can maintain 73% capacitance retention and 85% Coulomb efficiency after 10,000 cycles at 2A g−1. And it exhibits energy density of 8.6 Wh L−1 at power density of 122.4W L−1. The results show that ion implantation provides a selective method for nitrogen doping in multilayer MXene, making it more competitive in practical applications.

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Acknowledgements

The authors also thank Dr. Yuanjun Yang from Hefei University of Technology for the valuable discussion and partial funding support.

Funding

The authors appreciate financial support from the National Natural Science Foundation of China ( 51972029, 52072102) for this study.

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Authors and Affiliations

  1. School of Physics, Hefei University of Technology, Hefei, 230009, Anhui, China

    Qingqing Yang, Xingnian Li, Qiang Li & Qiong Tang

  2. School of Microelectronics, Hefei University of Technology, Hefei, 230009, Anhui, China

    Wei Wang, Mengyuan Xun, Li Meng & Jun Xu

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  1. Qingqing Yang
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  2. Wei Wang
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Yang, Q., Wang, W., Li, X. et al. Nitrogen doping in the surface layers of Ti3C2Tx/rGO film via nitrogen ion implantation for supercapacitor. J Solid State Electrochem 27, 1955–1967 (2023). https://doi.org/10.1007/s10008-023-05488-9

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