Abstract
To explore the method of adjusting electro-elastic coupling properties in flexoelectric semiconductor nanofibers, the theoretical model is established, and the non-uniform fibers which can adjust the electro-elastic properties are designed. In order to solve the differential equations with variable coefficients in the established model, the differential quadrature method is adopted to approximate the real solutions. Before analysis, the convergence and correctness of the adopted method are investigated systematically. Considering a fiber with linear profile, it is found that the distributions of all field quantities can be adjusted by manipulating the shape of the cross section. The maximum values of all field quantities appear at the narrow end where the stiffness is the minimum in the entire fiber. By investigating the effects of the cross section parameter, flexoelectric coefficient and initial carrier density on the electro-elastic field quantities, it can be observed that the field quantities are sensitive to the variation of these parameters. Besides, studying the charge production indicates that the total charge in the flexoelectric semiconductor is dominated by the polarization charge. In symmetric non-uniform fibers, the potential barriers and wells which are produced by axial tensile load or piecewise loads are studied, respectively. It is revealed that the height of the potential barrier and the depth of the potential well can be adjusted by designing the non-uniform cross section. Furthermore, it is found that the perturbation carrier in a PN junction tends to concentrate in the zone near the narrow position. The studies in this paper could be the guidance for the applications of flexoelectric semiconductor fibers.
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References
Wang, Z.L.: Piezopotential gated nanowire devices: piezotronics and piezo-phototronics. Nano Today 5, 540–552 (2010)
Wu, W., Wang, Z.L.: Piezotronics and piezo-phototronics for adaptive electronics and optoelectronics. Nat. Rev. Mater. 1, 23–24 (2016)
Wang, Z.L.: Nanobelts, nanowires, and nanodiskettes of semiconducting oxides—from materials to nanodevices. Adv. Mater. 15, 432–436 (2003)
Wang, Z.L.: Piezoelectric nanogenerators based on zinc oxide nanowire arrays. Science 312, 242–246 (2006)
Kaur, J., Singh, H.: Fabrication and analysis of piezoelectricity in 0D, 1D and 2D Zinc Oxide nanostructures. Ceram. Int. 46, 19401–19407 (2020)
Wang, W., Peng, D., Zhang, H., Yang, X., Pan, C.: Mechanically induced strong red emission in samarium ions doped piezoelectric semiconductor CaZnOS for dynamic pressure sensing and imaging. Opt. Commun. 395, 24–28 (2017)
Huolin, H., Hui, Z., Yaqing, C., et al.: High-temperature three-dimensional GaN-based hall sensors for magnetic field detection. J. Phys. D-Appl. Phys. 54, 075003 (2021)
Lee, J.W., Ye, B.U., Wang, Z.L., Lee, J.L., Baik, J.M.: Highly-sensitive and highly-correlative flexible motion sensors based on asymmetric piezotronic effect. Nano Energy 51, 185–191 (2018)
Han, W., Zhou, Y., Zhang, Y., et al.: Strain-gated piezotronic transistors based on vertical zinc oxide nanowires. ACS Nano 6, 5736 (2012)
Wang, X., Zhou, J., Song, J., et al.: Piezoelectric field effect transistor and nanoforce sensor based on a single ZnO nanowire. Nano Lett. 6, 2768–2772 (2006)
Yu, R., Wu, W., Ding, Y., et al.: GaN nanobelt-based strain-gated piezotronic logic devices and computation. ACS Nano 7, 6403 (2013)
Wu, W., Wei, Y., Wang, Z.L.: Strain-gated piezotronic logic nanodevices. Adv. Mater. 22, 4711–4715 (2010)
Zhang, C., Wang, X., Chen, W., et al.: An analysis of the extension of a ZnO piezoelectric semiconductor nanofiber under an axial force. Smart Mater. Struct. 26, 025030 (2017)
Zhang, C.L., Wang, X.Y., Chen, W.Q., et al.: Carrier distribution and electromechanical fields in a free piezoelectric semiconductor rod. J. Zhejiang Univ.-SCI A 17, 37–44 (2016)
Fan, S., Yuantai, H., Yang, J., et al.: Stress-induced potential barriers and charge distributions in a piezoelectric semiconductor nanofiber. Appl. Math. Mech.-Engl. Ed. 40, 591–600 (2019)
Dai, X., Zhu, F., Qian, Z., et al.: Electric potential and carrier distribution in a piezoelectric semiconductor nanowire in time-harmonic bending vibration. Nano Energy 43, 22–28 (2017)
Zhang, C., Wang, X., Chen, W., et al.: Bending of a cantilever piezoelectric semiconductor fiber under an end force Generalized Models and Non-classical Approaches in Complex Materials 2, pp. 261–278. Springer, Cham (2018)
Li, P., Jin, F., Yang, J.: Effects of semiconduction on electromechanical energy conversion in piezoelectrics. Smart Mater. Struct. 24, 025021 (2015)
Guolin, W., Jinxi, L., Xianglin, L., et al.: Extensional vibration characteristics and screening of polarization charges in a ZnO piezoelectric semiconductor nanofiber. J. Appl. Phys. 124, 094502 (2018)
Yang, J.S., Yang, X.M., Turner, J.A.: Amplification of acoustic waves in piezoelectric semiconductor plates Arch. Appl. Mech. 74, 288–298 (2004)
Yang, J., Yang, X., Turner, J.A.: Amplification of acoustic waves in piezoelectric semiconductor shells. J. Intell. Mater. Syst. Struct. 16, 613–621 (2005)
Gu, C., Jin, F.: Shear-horizontal surface waves in a half-space of piezoelectric semiconductors Philos. Mag. Lett. 95, 92–100 (2015)
Yang, J.: An anti-plane crack in a piezoelectric semiconductor. Int. J. Fract. 136, L27–L32 (2005)
Hu, Y., Zeng, Y., Yang, J., et al.: A mode III crack in a piezoelectric semiconductor of crystals with 6 mm symmetry. Int. J. Solids Struct. 44, 3928–3938 (2007)
Sladek, J., Sladek, V., Pan, E., et al.: Dynamic anti-plane crack analysis in functional graded piezoelectric semiconductor crystals. CMES-Comp. Model. Eng. Sci. 99, 273–296 (2014)
Zhao, M., Pan, Y., et al.: Extended displacement discontinuity method for analysis of cracks in 2D piezoelectric semiconductors. Int. J. Solids Struct. 94, 50–59 (2016)
Luo, Y., Cheng, R., Zhang, C., et al.: Electromechanical fields near a circular PN junction between two piezoelectric semiconductors. Acta Mech. Solida Sin. 31, 127–140 (2018)
Guo, M., Li, Y., Qin, G., et al.: Nonlinear solutions of PN junctions of piezoelectric semiconductors. Acta Mech. 230, 1825–1841 (2019)
Cheng, R., Zhang, C., Yang, J., et al.: Thermally induced carrier distribution in a piezoelectric semiconductor fiber. J. Electron. Mater. 48, 4939–4946 (2019)
Cheng, R., Zhang, C., Chen, W., et al.: Temperature effects on PN junctions in piezoelectric semiconductor fibers with thermoelastic and pyroelectric couplings. J. Electron. Mater. 49, 3140–3148 (2020)
Sharma, J.N., Sharma, K.K.: Kumar: Modelling of acoustodiffusive surface waves in piezoelectric-semiconductor composite structure. J. Mech. Mater. Struct. 6, 791–812 (2011)
Yang, J.S., Zhou, H.G.: Acoustoelectric amplification of piezoelectric surface waves. Acta Mech. 172, 113–122 (2004)
Cheng, R., Zhang, C., Chen, W., et al.: Piezotronic effects in the extension of a composite fiber of piezoelectric dielectrics and nonpiezoelectric semiconductors. J. Appl. Phys. 124, 064506 (2018)
Luo, Y., Zhang, C., Chen, W., et al.: Piezopotential in a bended composite fiber made of a semiconductive core and of two piezoelectric layers with opposite polarities. Nano Energy 54, 341–348 (2018)
Cheng, R., Zhang, C., Zhang, C., et al.: Magnetically controllable piezotronic responses in a composite semiconductor fiber with multiferroic coupling effects. Phys. Status Solidi A-Appl. Res. 217, 2070012 (2020)
Wang, G., Liu, J., Feng, W., et al.: Magnetically induced carrier distribution in a composite rod of piezoelectric semiconductors and piezomagnetics. Materials 13, 3115 (2020)
Zhao, MingHao, Liu, X., Fan, CuiYing, et al.: Theoretical analysis on the extension of a piezoelectric semiconductor nanowire: effects of flexoelectricity and strain gradient. J. Appl. Phys. 127, 085707 (2020)
Zhao, M., Niu, J., Lu, C., et al.: Effects of flexoelectricity and strain gradient on bending vibration characteristics of piezoelectric semiconductor nanowires. J. Appl. Phys. 129, 164301 (2021)
Sun, L., Zhang, Z., Gao, C., et al.: Effect of flexoelectricity on piezotronic responses of a piezoelectric semiconductor bilayer. J. Appl. Phys. 129, 244102 (2021)
Wang, L., Liu, S., Feng, X., et al.: Flexoelectronics of centrosymmetric semiconductors. Nat. Nanotechnol. 15, 661–667 (2020)
Qu, Y., Jin, F., Yang, J.: Effects of mechanical fields on mobile charges in a composite beam of flexoelectric dielectrics and semiconductors. J. Appl. Phys. 127, 194502 (2020)
Qu, Y., Jin, F., Yang, J.: Magnetically induced charge redistribution in the bending of a composite beam with flexoelectric semiconductor and piezomagnetic dielectric layers. J. Appl. Phys. 129, 064503 (2021)
Qu, Y., Jin, F., Yang, J.: Torsion of a flexoelectric semiconductor rod with a rectangular cross section. Arch. Appl. Mech. 91, 2027–2038 (2021)
Chu, L., Dui, G., Mei, H., et al.: An analysis of flexoelectric coupling associated electroelastic fields in functionally graded semiconductor nanobeams. J. Appl. Phys. 130, 115701 (2021)
Yao D, Zhou H, Wang X Y: Characterization method of flexoelectric coefficient of piezoelectrics at nanoscale. In: Symposium on Piezoelectricity, Acoustic Waves, and Device Applications 325–330 2017
Zhu, W., Fu, J.Y., Nan, L., et al.: Piezoelectric composite based on the enhanced flexoelectric effects. Appl. Phys. Lett. 89, 2920 (2006)
Ren, C., Wang, K.F., Wang, B.L., et al.: Adjusting the electromechanical coupling behaviors of piezoelectric semiconductor nanowires via strain gradient and flexoelectric effects. J. Appl. Phys. 128, 215701 (2020)
Lazar, M., Maugin, G.A., Aifantis, E.C.: Dislocations in second strain gradient elasticity. Int. J. Solids Struct. 43, 1787–1817 (2006)
Fang, K., Li, P., Li, N., Liu, D., Qian, Z., Kolesov, V., et al.: Model and performance analysis of non-uniform piezoelectric semiconductor nanofibers. Appl. Math. Model. 104, 628–643 (2021)
Mindlin, R.D., Eshel, N.N.: On first strain-gradient theories in linear elasticity. Int. J. Solids Struct. 4, 109–124 (1968)
Hu, S., Shen, S.: Electric field gradient theory with surface effect for nano-dielectrics. CMC-Comput. Mat. Contin. 13, 63–87 (2009)
Zhang, C.L., Luo, Y.X., Cheng, R.R., Wang, X.Y.: Electromechanical fields in piezoelectric semiconductor nanofibers under an axial force. MRS Adv. 2(56), 3421–3426 (2017). https://doi.org/10.1557/adv.2017.301
Bert, C.W., Malik, M.: Differential quadrature method in computational mechanics: a review. Appl. Mech. Rev. 49, 1–28 (1996)
Yang, W., Yuantai, Hu., Pan, E.: Tuning electronic energy band in a piezoelectric semiconductor rod via mechanical loading. Nano Energy 66, 104147 (2019)
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This research is funded by the National Natural Science Foundation of China (Grant No. 12072253).
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Appendix 1
Appendix 1
In this appendix, the exact solution based on nonlinear theory is introduced briefly. According to the relevant literature works [54], the nonlinear equations for p-type semiconductor are expressed by
where \(p = p_{0} \exp ( - \frac{q}{{k_{B} T}}\varphi )\) can be obtained when the boundaries are electrically isolated, i.e., \(J_{3}^{p} (0) = J_{3}^{p} (L) = 0\). Besides, \(p_{0} = N_{A}^{ - }\) is assumed. Solving the governing equations under the given boundary conditions (Eq. (11)) by using COMSOL Multiphysics software, the nonlinear results will be obtained.
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Zhao, L., Jin, F. The adjustment of electro-elastic properties in non-uniform flexoelectric semiconductor nanofibers. Acta Mech 234, 975–990 (2023). https://doi.org/10.1007/s00707-022-03418-w
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DOI: https://doi.org/10.1007/s00707-022-03418-w