Abstract
Increasing demand for low power consumption with faster operating speed at nanoscale while overpowering the issue of mobility degradation due to short channel effects, strained silicon technology based devices proved to be a promising substitute for future nano-device applications. The strain induced quantum well (QW) based nano-system device is developed deploying ultrathin strained HOI structure comprising of s-SiGe QW sandwiched between two s-Si layers, thus instigating biaxial strain in the channel region. With introduction of strain mechanism and band-bending, bandgap modification occurs resulting in formation of quantum well-barrier system in narrow channel, thereby confining charge carriers and sufficing ballistic transport via quantum tunneling with high electron velocity. Hence, a fundamental physical phenomenon of succumbing of quantum charge carriers that initiate in carrier transport within the strained induced QW based nano-system device is estimated. The electrostatic potential, electric field and mobility are calculated analytically, analyzed and compared for 10 nm and 22 nm tri-layered channel nano-system devices. The resulting drain current of the novel 10 nm strain induced QW nano-system device when compared with 22 nm strained DG FET and with existing conventional 10 nm DG SOI FET an enormous enrichment of 97.7% and 40.3%, respectively, is perceived. Hence the novel device instituted, demonstrates its competence to accomplish the technological requirement at nano regime.
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The authors thank Dept of ECE, NIT Mizoram for providing facilities and support to carry out this work.
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K.K. conducted the modeling and simulation, analyzed the data, and prepared the figures as first author. R.S.D. being Supervisor of K.K. initiated the research and studied and also contributed to the modeling and developing the novel idea and improvements in the manuscript. R.S.D. is the corresponding author who planned and coordinated the study, contributed to data analysis and wrote to develop the manuscript. S.B. and R.D. supported the theory of the manuscript. All the authors discussed the results and contributed to the manuscript at various stages.
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Kumar, K., Dhar, R.S., Bhattacharya, S. et al. Performance analysis and development of strain induced quantum well based nano-system device technology. Microsyst Technol 27, 3703–3710 (2021). https://doi.org/10.1007/s00542-020-05143-7
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DOI: https://doi.org/10.1007/s00542-020-05143-7