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Design and analysis of a RF MEMS shunt switch using U-shaped meanders for low actuation voltage

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Abstract

This paper presents the design and simulation of RF MEMS switch using uniform U-Shaped meanders. High isolation and low insertion loss are the main performance parameters enhanced by considering the inductive sections on the design and developing high capacitance using HfO2 as a dielectric medium. The inductive sections in the design help maintain the device at resonance. The proposed uniform U-shaped meanders lower the spring constant and reduce the Pull-in-voltage of the switch. The performance characteristics are observed by simulating the proposed switch in the electromechanics environment using the COMSOL FEM tool. The switch exhibits a low Pull-in-voltage of 5.2 V with a very low switching time of 23.1 µs. Total capacitance of 42.19 fF is formed during upstate which provides a low insertion loss of less than 0.1 dB. Capacitance of 19.11 pF during downstate provides high isolation of − 42.11 dB.

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Acknowledgements

The Authors would like to NMDC supported by NPMASS, National Institute of Technology, Silchar for providing the necessary computational Tools.

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Authors and Affiliations

  1. MEMS Research Center, Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation (Deemed to be University), Vaddeswaram, Guntur, 522502, India

    G. Shanthi, K. Srinivasa Rao & K. Girija Sravani

  2. Department of Electronics and Communication Engineering, VNR Vignana Jyothi Institute of Engineering and Technology, Bachupally, Hyderabad, 500090, India

    G. Shanthi

  3. National MEMS Design, Department of Electronics and Communication Engineering, National Institute of Technology, Silchar, Assam, 788010, India

    K. Girija Sravani

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  1. G. Shanthi
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  2. K. Srinivasa Rao
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  3. K. Girija Sravani
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Correspondence to G. Shanthi or K. Srinivasa Rao.

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Shanthi, G., Srinivasa Rao, K. & Girija Sravani, K. Design and analysis of a RF MEMS shunt switch using U-shaped meanders for low actuation voltage. Microsyst Technol 26, 3783–3791 (2020). https://doi.org/10.1007/s00542-020-04864-z

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