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Development of noise model for InAsSb MOSFETs and their application in low noise amplifiers

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Abstract

In this paper, we develop the low frequency noise (LFN) model for symmetric double gate InAsSb channel n-MOSFETs and report noise performance of such devices as well as amplifier circuits built using them. Our noise model relies on the drain current Id which is obtained from the carrier concentration and Pao-Sah’s current formulation taking into account field dependent electron mobility and interface trapped-charge density Dit. The drain current model is calibrated with reported experimental data. The calculated values of Id and transconductance gm are utilized to find power spectral density of drain current as a function of drain and gate bias voltages, channel length, channel thickness, equivalent oxide thickness and also Dit. Moreover, we have studied the performance of low noise amplifiers (LNAs) with simultaneous noise and input matching (SNIM) topology using both InAsSb and Si channel devices, and computed the minimum noise figure and output noise power density and compared the results. Our investigation reveals that InAsSb MOSFETs exhibit better low noise performance in the strong inversion region of operation at which devices are biased to operate usually for analog circuit applications. Furthermore, the LNA with InAsSb channel MOSFET exhibits noise figure of 1.38 dB in strong inversion region enabling the amplifier suitable for many applications.

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Authors and Affiliations

  1. Department of Physics, JIS College of Engineering, Block A, Phase III, Kalyani, India

    Swagata Bhattacherjee

  2. Department of Radio Physics and Electronics, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata, 700 009, India

    Abhijit Biswas

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  1. Swagata Bhattacherjee
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  2. Abhijit Biswas
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Correspondence to Swagata Bhattacherjee.

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Bhattacherjee, S., Biswas, A. Development of noise model for InAsSb MOSFETs and their application in low noise amplifiers. Microsyst Technol 25, 1555–1562 (2019). https://doi.org/10.1007/s00542-017-3466-x

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  • DOI: https://doi.org/10.1007/s00542-017-3466-x

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