Abstract
This paper discusses approaches for the isolation of deep high aspect ratio through silicon vias (TSV) with respect to a Via Last approach for micro-electro-mechanical systems (MEMS). Selected TSV samples have depths in the range of 170…270 µm and a diameter of 50 µm. The investigations comprise the deposition of different layer stacks by means of subatmospheric and plasma enhanced chemical vapour deposition (PECVD) of tetraethyl orthosilicate; Si(OC2H5)4 (TEOS). Moreover, an etch-back approach and the selective deposition on SiN were also included in the investigations. With respect to the Via Last approach, the contact opening at the TSV bottom by means of a specific spacer-etching method have been addressed within this paper. Step coverage values of up to 74 % were achieved for the best of those approaches. As an alternative to the SiO2-isolation liners a polymer coating based on the CVD of Parylene F was investigated, which yields even higher step coverage in the range of 80 % at the lower TSV sidewall for a surface film thickness of about 1000 nm. Leakage current measurements were performed and values below 0.1 nA/cm2 at 10 kV/cm were determined for the Parylene F films which represents a promising result for the aspired application to Via Last MEMS-TSV.
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Acknowledgments
Parts of the investigations were funded by the German Research Foundation by means of the International Research Training Group 1215. The authors like to thank also their colleagues Gabriele Lesner, Cornelia Kowol and Dirk Rittrich for the time consuming SEM-sample preparation and imaging.
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Hofmann, L., Fischer, T., Werner, T. et al. Study on TSV isolation liners for a Via Last approach with the use in 3D-WLP for MEMS. Microsyst Technol 22, 1665–1677 (2016). https://doi.org/10.1007/s00542-015-2797-8
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DOI: https://doi.org/10.1007/s00542-015-2797-8