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Fabrication and characterization of highly sensitive ZnO/Si SAW device with Pd selective layer for F2 gas sensing

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Abstract

In this paper, ZnO nano thin film is prepared on n-type Si substrate with <100> orientation using RF sputtering technique and a surface acoustic wave (SAW) based fluorine (F2) gas sensor integrated on ZnO with Palladium (Pd) on top as sensing layer is fabricated and characterized. The input and output interdigital transducer is fabricated of aluminum (Al) using nanolithography technique. The morphological characterization of ZnO thin film is done using scanning electron microscopy and atomic force microscopy. The XRD confirms the formation of ZnO nanostructured thin film. The voltage handling capability of the fabricated device is evaluated with negative and positive bias voltage. The study confirms that the SAW sensor based on ZnO/Si substrate and Pd sensing layer has good characteristic response of F2 gas with different concentration of gas from 0.5 to 20 ppm. The sensor shows good reproducibility and its sensitivity is approximately 2.4 kHz ppm−1.

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Acknowledgments

This work was done using the facilities of Centre of Excellence in Nanoelectronics (CEN) under INUP Program at Indian Institute of Technology, Bombay (IITB).

Conflict of interest

This work is related to the PhD work carried by the first author and the authors declare that there is no conflict of interest.

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Correspondence to Parveen Lehana.

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Khan, S., Arya, S., Kumar, S. et al. Fabrication and characterization of highly sensitive ZnO/Si SAW device with Pd selective layer for F2 gas sensing. Microsyst Technol 21, 2011–2017 (2015). https://doi.org/10.1007/s00542-014-2277-6

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  • DOI: https://doi.org/10.1007/s00542-014-2277-6

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