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Optical band-diagram, Urbach energy tails associated with photoluminescence emission in defected ZnO thin films deposited by sol–gel process dip-coating: effect of precursor concentration

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Abstract

This study employs zinc acetate as the precursor for synthesizing pure zinc oxide thin films through the sol–gel process. Comprehensive characterization and analysis were conducted using X-ray diffraction, field-emission scanning electron microscopy, ultraviolet–visible-infrared spectrophotometry, ellipsometry, and photoluminescence. The X-ray diffraction study confirms the hexagonal wurtzite polycrystalline structure of zinc oxide. Increasing the zinc precursor concentration resulted in a decrease in the observed intensity of diffraction lines, as revealed by XRD studies. Microstructural parameters such as crystallite size and micro-strain were determined using the Scherrer equation and the Williamson–Hall method. The Williamson–Hall method indicated an increase in crystallite size values from 28.3 to 36.9 nm, while micro-strain values decreased from 1.192 × 10−3 to 1.12 × 10−3 with an increase in zinc acetate concentration from 0.1 M to 0.5 M. Scanning electron microscopy images displayed connected microstructures with wrinkle network architectures influenced by the concentration of zinc acetate, consistent with the texture coefficient results. Optical characteristics were investigated in the 300–2500 nm range through transmission measurements and subsequent photoluminescence measurements. The optical band-gap energy was found to decrease from 3.33 to 3.21 eV and the band tail width (Urbach energy) decreased from 0.344 to 0.105 eV with an increase in zinc concentration.

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Data availability

The data used in this study are available upon request from the corresponding author. Restrictions apply to the availability of these data, which were used under license for the current study and are not publicly available. However, data may be available from the authors upon reasonable request and with permission from the data owner.

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  1. Ibrahim Yaacoub Bouderbala

    Present address: Applied Optics Laboratory, Institute of Optics and Precision Mechanics, University of Ferhat Abbas, 19000, Setif, Algeria

Authors and Affiliations

  1. Applied Optics Laboratory, Institute of Optics and Precision Mechanics, University of Ferhat Abbas, 19000, Setif, Algeria

    Amir Guessoum & Omeyma Bouhlassa

  2. Materials of Semiconductors and Metal Oxides Laboratory (LMSOM), USTHB, 16000, Algiers, Algeria

    Selma Rabhi

  3. University of Yahia Fares Medea, 26000, Medea, Algeria

    Selma Rabhi

  4. The National School of Biotechnology Taoufik Khaznadar (ENSB), 25000, Constantine, Algeria

    Imed-Eddine Bouras

  5. University of Salah Boubnider, 25000, Constantine, Algeria

    Imed-Eddine Bouras

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Contributions

Ibrahim Yaacoub Bouderbala: conceptualization, methodology, and writing—original draft. Amir Guessoum: data curation, formal analysis, and visualization. Rabhi Selma: investigation, writing—review and editing, and supervision. Bouhlassa Omeyma: investigation, writing—review and editing. Bouras Imed-Eddine: validation, writing—review and editing, and visualization.

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Bouderbala, I.Y., Guessoum, A., Rabhi, S. et al. Optical band-diagram, Urbach energy tails associated with photoluminescence emission in defected ZnO thin films deposited by sol–gel process dip-coating: effect of precursor concentration. Appl. Phys. A 130, 205 (2024). https://doi.org/10.1007/s00339-024-07366-1

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