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Enhanced magnetic and dielectric properties of In3+-doped Y2BiInxFe5−xO12 ferrites for microwave device applications

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Abstract

Herein, bismuth–yttrium iron garnet (Bi-YIG) doped with In3+ ions with chemical formula Y2BiInxFe5−xO12 (x = 0.00–0.75 in steps of 0.15) was successfully prepared using solid-state reaction method. Effects of In3+-ion doping on microstructural, magnetic, and dielectric properties of Bi-YIG ferrite are investigated and discussed. Results show that In doping does not change the phase of Bi-YIG ferrite but increases lattice constant. Microstructure analysis indicates that In doping not only results in uniform grain shape but also influences grain size (the maximum average size is 3.46 μm at x = 0.30). Vibrating sample magnetometry results reveal that upon increasing In3+-ion content from x = 0.00 to x = 0.75, saturation magnetization first increases from 14.48 to 24.71 emu/g (at x = 0.45) and then decreases to 15.43 emu/g (at x = 0.75). Ferromagnetic resonance linewidth first decreases from 538.5 to 384.7 Oe (at x = 0.30) and then increases to 416.5 Oe (at x = 0.75). Real part of the permeability increases from 17.1 (x = 0.00) to 21.2 (x = 0.45) and then decreases to 19.5 (x = 0.75) in frequency range from 1 MHz to 1 GHz. Additionally, In doping leads to the dielectric constant reaching a maximum value of ε' = 20.4 at x = 0.15, while maintaining low dielectric loss of ~ 10−4 at the frequency of 10 GHz. Prepared material can be employed in high-frequency circulators, isolators, and microwave devices.

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The data used to support the findings of this study is available from the corresponding author upon request.

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Acknowledgements

This work was supported by the National Key R&D Program of China (No. 2022YFB3504800), by the National Key Research and Development Program of China (No. 2018YFE0115500), by National Natural Science Foundation of China Nos. 52003256, 51902037.

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Authors and Affiliations

  1. State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China

    Chunyang Wu, Bing Lu, Yang Xiao, Yingli Liu & Jie Li

  2. School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China

    Bing Lu, Yang Xiao, Wei Li, Shuai Wang, Yingli Liu & Jie Li

  3. BGRIMM Magnetic Materials & Technology Co., Ltd, Beijing, 102600, China

    PengJie Zhang

  4. Chongqing Materials Research Institute Co., Ltd., Chongqing, 400707, China

    Chao Wang

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  1. Chunyang Wu
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  4. Wei Li
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Contributions

CW: methodology, writing-orignal draft. BL: formal analysis. YX: results discussion. WL: results discussion. SW: data testing and analysis. YL: writing- review and editing. PZ: results discussion. CW: data testing. JL: funding acquisition, writing- review and editing.

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Correspondence to Jie Li.

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Wu, C., Lu, B., Xiao, Y. et al. Enhanced magnetic and dielectric properties of In3+-doped Y2BiInxFe5−xO12 ferrites for microwave device applications. Appl. Phys. A 129, 867 (2023). https://doi.org/10.1007/s00339-023-07159-y

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