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RETRACTED ARTICLE: Features of contact melting of semiconductors and their microstructures under thermal shock conditions

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This article was retracted on 30 October 2023

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Abstract

This paper studies the processes of contact melting of metal–semiconductor microstructures. The contact interaction was considered under thermal shock conditions formed by single current pulses (the current density of j = 2…8 × 1010 A/m2 and a duration of τ = 50 µs…3 ms). The diffusion mechanism of contact melting was confirmed. From the analysis of the melting nature of aluminium metallisation tracks (up to 7 µm thick), the optimal modes of contact melting were revealed in the Al–Si system. Such modes existed with current pulses up to 6.5 × 1010 A/m2. In the case of an increase in the amplitude of the current pulses, the contact melting rate increases, but at the same time, there is a significant heterogeneity in the thickness of the metal film along the length of the metallisation track. In addition, when implementing such modes, the origin and development of microcracks were detected during the crystallisation of the material after switching off the pulse.

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Fig. 1

taken from the output of the photomultiplier during the passage of the current pulse through the Al-Si system. Recorded by a two-beam oscilloscope synchronously with oscillogram 1

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References

  1. V.V. Popov, M.L. Grilli, A. Koptyug, L. Jaworska, A. Katz-Demyanetz, D. Klobčar, S. Balos, B.O. Postolnyi, S. Goel, Powder bed fusion additive manufacturing using critical raw materials. Materials 14(4), 1–37 (2021). https://doi.org/10.3390/ma14040909

    Article  Google Scholar 

  2. J. Mireles, H.-C. Kim, I.H. Lee, D. Espalin, F. Medina, E. Macdonald, R. Wicker, Development of a fused deposition modeling system for low melting temperature metal alloys. J. Electr. Pack. Trans. ASME. 135(1), 011008 (2013). https://doi.org/10.1115/1.4007160

    Article  Google Scholar 

  3. J. Slotwinski, C. Martin, T.A. Johnson, Survey of mechanical property variability of additively manufactured metals. J. Test. Eval. 50(1), 11–46 (2022). https://doi.org/10.1520/jte20200461

    Article  Google Scholar 

  4. B. Poorganji, E. Ott, R. Kelkar, A. Wessman, M. Jamshidinia, Materials ecosystem for additive manufacturing powder bed fusion processes. J. Manuf. 72(1), 561–576 (2020). https://doi.org/10.1007/s11837-019-03892-z

    Article  Google Scholar 

  5. B. Gerdes, R. Zengerle, P. Koltay, L. Riegger, Direct printing of miniscule aluminum alloy droplets and 3D structures by StarJet technology. J. Microm. Microen. 28(7), 074003 (2018). https://doi.org/10.1088/1361-6439/aab928

    Article  Google Scholar 

  6. M. Takahashi, D. Giuranno, E. Ricci, R.M. Arato, Novakovic, surface properties of liquid al-si alloys. Phys. Metall. Mat. Sci. 50(2), 1050–1060 (2019). https://doi.org/10.1007/s11661-018-5054-9

    Article  Google Scholar 

  7. J.-M. Kim, K. Shin, J.-S. Shin, Microstructural evolution and growth of intermetallic compounds at the interface between solid cast iron and liquid Al-Si alloy. Metals 10(6), 1–9 (2020). https://doi.org/10.3390/met10060759

    Article  MathSciNet  Google Scholar 

  8. M.A. Ackers, O.M.D.M. Messé, U. Hecht, Novel approach of alloy design and selection for additive manufacturing towards targeted applications. J. All. Comp. 866, 158965 (2021). https://doi.org/10.1016/j.jallcom.2021.158965

    Article  Google Scholar 

  9. Y. Zhang, Y. Chang, G. Lv, W. Ma, Y. He, G. Xie, Separation of silicon from coarse al-si melts under alternating electromagnetic field with varying frequencies. SILICON 12(12), 2851–2860 (2020). https://doi.org/10.1007/s12633-020-00375-8

    Article  Google Scholar 

  10. D. Räbiger, Y. Zhang, V. Galindo, S. Franke, B. Willers, S. Eckert, The relevance of melt convection to grain refinement in Al-Si alloys solidified under the impact of electric currents. Act. Mater. 79, 327–338 (2014). https://doi.org/10.1016/j.actamat.2014.07.037

    Article  ADS  Google Scholar 

  11. C.-D. Li, X. Chen, X.-W. Zhang, S.-J. Xu, Y. Hu, H.-H. Jian, J.-J. Xu, Friction and wear behavior of Al-Si alloy cylinder liner prepared by surface shaping treatments. J. Eng. Trib. 234(9), 1522–1529 (2020). https://doi.org/10.1177/1350650120909729

    Article  Google Scholar 

  12. M.A. Faraji, New approach in numerical modeling of inoculation of primary silicon in a hypereutectic Al-Si alloy. Metall. Mater. Trans. 52, 778–791 (2021). https://doi.org/10.1007/s11663-020-02052-y

    Article  Google Scholar 

  13. A. Hoseinpur, J. Safarian, Mechanisms of graphite crucible degradation in contact with Si-Al melts at high temperatures and vacuum conditions. Vacuum 171, 108993 (2020). https://doi.org/10.1016/j.vacuum.2019.108993

    Article  ADS  Google Scholar 

  14. A.V. Melkikh, Contact melting of metals explained via the theory of quasi-liquid layer. App. Sci. (Switzerland) 11(1), 1–4 (2021). https://doi.org/10.3390/app11010051

    Article  Google Scholar 

  15. A.A. Skvortsov, V.E. Muradov, E.A. Kashtanova, Studying electromigration of melted inclusions in aluminum-silicon system. Techn. Phys. Lett. 37(6), 507–510 (2011). https://doi.org/10.1134/S1063785011060125

    Article  ADS  Google Scholar 

  16. A.A. Skvortsov, M.V. Koryachko, P.A. Skvortsov, M.N. Lukyanov, On the issue of crack formation in a thin dielectric layer on silicon under thermal shock. J. Mater. Eng. Perf. 29(7), 4390–4395 (2020). https://doi.org/10.1007/s11665-020-04925-4

    Article  Google Scholar 

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Acknowledgements

This paper was completed within the framework of RSF project No. 19-79-00372.

This study is conducted with financial support from the Ministry of Education and Science of the Russian Federation (projekt No. FZRR-2020-0023/code 0699-2020-0023).

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  1. Moscow Polytechnic University, 38 Bolshaya Semyonovskaya Str., Moscow, Russian Federation, 107023

    Arkadiy Skvortsov, Marina Koryachko, Olga Sklemina & Margarita Rybakova

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  1. Arkadiy Skvortsov
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  2. Marina Koryachko
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Skvortsov, A., Koryachko, M., Sklemina, O. et al. RETRACTED ARTICLE: Features of contact melting of semiconductors and their microstructures under thermal shock conditions. Appl. Phys. A 128, 242 (2022). https://doi.org/10.1007/s00339-022-05398-z

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