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Dual-material dual-oxide double-gate TFET for improvement in DC characteristics, analog/RF and linearity performance

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Abstract

To overcome the problem of fabrication complexity and to reducei the cost of microelectronic devices, a new concept of dual-material control gate with dual-oxide tunnel field-effect transistor is investigated. A stack gate approach is applied to reduce the width of tunneling barrier at source–channel junction. Use of dual oxides at source–channel interface provides improved capacitive coupling, which enhances the on-state current. The entire gate segment has been partitioned into three parts, namely tunnel gate \((M_1)\), control gate \((M_2)\) and auxiliary gate \((M_3)\) with different work functions such as \(\phi _{1}\), \(\phi _{2}\) and \(\phi _{3}\). In this context, to keep dual-work functionality, the feasible combinations of these work functions are adopted. Technology computer- aided design (TCAD) simulations of these proposed combinations of work functions along with dual oxides provide better results for the combinations of \((\phi _1=\phi _3<\phi _2)\). In addition, comparison between these combinations on the basis of analog/RF performance is done in this work. This work shows improved analog/RF parameters such as \(g_\text {m}, C_\text {gs}, C_\text {gd}, f_\text {T}\) and TFP, and linearity parameters including \(g_\text {m3}, \text {VIP3, IIP3}\) and \(\text {IMD3}\) for the proposed device DMDODG-TFET (dual-material dual-oxide double-gate TFET). The use of this proposed device structure reduces the ambipolar behavior and subthreshold swing \((18.5\,\text {mV}/\text {deacde})\), and enhances the on-current [\(3.6\times 10^{-5}\,(A/\upmu \text {m})\)] significantly, making it suitable for analog/RF and linearity applications.

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Authors and Affiliations

  1. Jaypee Institute of Information Technology, Noida, India

    Satyendra Kumar, Km. Sucheta Singh, Kaushal Nigam & Vinay Anand Tikkiwal

  2. PDPM-India Institute of Information Technology Design and Manufacturing, Jabalpur, MP, India

    Bandi Venkata Chandan

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  1. Satyendra Kumar
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  2. Km. Sucheta Singh
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  3. Kaushal Nigam
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  4. Vinay Anand Tikkiwal
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  5. Bandi Venkata Chandan
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Kumar, S., Singh, K.S., Nigam, K. et al. Dual-material dual-oxide double-gate TFET for improvement in DC characteristics, analog/RF and linearity performance. Appl. Phys. A 125, 353 (2019). https://doi.org/10.1007/s00339-019-2650-5

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